Hostname: page-component-77c89778f8-cnmwb Total loading time: 0 Render date: 2024-07-21T23:59:36.591Z Has data issue: false hasContentIssue false

Development of Mechanical Stress in Cuni(mn) Films During Temperature Ramping: Related Mechanisms

Published online by Cambridge University Press:  10 February 2011

W. Brückner
Affiliation:
Institute of Solid State and Materials Research Dresden, D-01 171 Dresden, Germany, w.brueckner@jfw-dresden.de
St. Baunack
Affiliation:
Institute of Solid State and Materials Research Dresden, D-01 171 Dresden, Germany, w.brueckner@jfw-dresden.de
W. Pitschke
Affiliation:
Institute of Solid State and Materials Research Dresden, D-01 171 Dresden, Germany, w.brueckner@jfw-dresden.de
J. Thomas
Affiliation:
Institute of Solid State and Materials Research Dresden, D-01 171 Dresden, Germany, w.brueckner@jfw-dresden.de
Get access

Abstract

This paper focusses on the development of biaxial stress in Cu0.57Nio. 42Mno.ol thin films during annealing in Ar and, for comparison, in vacuum. Besides stress-temperature measurements also resistance-temperature investigations as well as chemical and microstructural characterization by Auger electron spectroscopy, scanning and transmission electron microscopy, and X-ray diffraction were carried out. To explain the stress evolution, atomic rearrangement (excessvacancy annihilation, grain-boundary relaxation, and shrinkage of grain-boundary voids) and oxidation were considered. Up to 250 - 300 °C grain-boundary relaxation was found to be the dominating process. A sharp transition from compressive to tensile stress between 300 °C and 380 °C is explained by the formation of a NiO surface layer

Type
Research Article
Copyright
Copyright © Materials Research Society 1998

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1.Nishino, I., Ichinose, Y., Sorimachi, Y., and Tsubata, I., Int. J. Hybrid Microelectronics 8, 18 (1985).Google Scholar
2.BrUckner, W., Baunack, St., Elefant, D., and Reiss, G., J. Appl. Phys. 79, 8516 (1996).Google Scholar
3.Berlicki, T. H., Osadnik, S. J., and Prociow, E. L., Vide Sci. Tech. Appl. (France) 279 suppl., 221 (1996).Google Scholar
4.Kiyokawa, H., Yonezawa, S., Horita, K., Unishi, T., and Takashima, M., Denki Kagaku 63, 648 (1995).Google Scholar
5.Bruckner, W., Edelmann, J., Vinzelberg, H., Reiss, G., and Knuth, Th., Thin Solid Films 280, 227 (1996).Google Scholar
6.Brickner, W., Baunack, St., Reiss, G., Leitner, G., and Knuth, Th., Thin Solid Films 258, 252 (1995).Google Scholar
7.Doerner, M. F. and Nix, W. D., CRC Critical Reviews in Solid State and Materials Sciences 14, 225 (1988).Google Scholar
8.Bruickner, W., Sobe, G., GrieBmann, H., Baunack, St., and Reiss, G., Thin Solid Films 261, 90(1995).Google Scholar
9.Gaarenstrom, S. W., Appl. Surf. Sci. 7, 7(1981).Google Scholar
10.Venos, R., Thesis, University of Regensburg (Germany), 1989.Google Scholar
11.Briickner, W., Pitschke, W., Baunack, St., Thomas, J., and Reiss, G., to be published.Google Scholar
12.Brfickner, W. and GrieBmann, H., to be published.Google Scholar