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Development of Aluminum Gate Thin-Film Transistors Based on Aluminum Oxide Insulators

Published online by Cambridge University Press:  22 February 2011

Toshjhisa Tsukada
Toshjhisa Tsukada*
Affiliation:
Central Research Laboratory, Hitachi, Ltd. 1–280 Higashi-koigakubo, Kokubunji, Tokyo 185, Japan
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Abstract

Development of aluminum gate thin-film transistors (TFT) is described. This TFT is fabricated based on an aluminum oxide insulator technology, in which aluminum is anodically oxidized to form Al2O3. The use of aluminum is effective in reducing the delay of the gate busline of the display panels due to its low resistivity. The Al2O3 films formed by an anodic oxidation, block the growth of hillocks during TFT fabrication which is one of the biggest issues of aluminum metallization. With this technology it is possible to design and fabricate TFT/LCD panels larger than 30 inches and with more than 1000 scan lines.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 284: Symposium G – Amorphous Insulating Thin Films , 1992 , 371
Copyright
Copyright © Materials Research Society 1993

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References

REFERENCES

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