Titanium nitride films are used in a variety of applications in the semiconductor industry, but the stoichiometry and homogeneity of the films can be difficult to control and characterize. The National Institute of Standards and Technology (NIST) is developing a TiN thin film on silicon to be used as a physical and chemical standard for the semiconductor industry. A prototype 100 nm thick film has been manufactured by dual ion beam deposition. NIST is characterizing the film by x-ray interferometry for thickness and density, neutron depth profiling for nitrogen content and homogeneity as a function of depth, neutron activation analysis for titanium content, and x-ray fluorescence spectromety, electron probe microanalysis, grazing incidence x-ray photoelectron spectroscopy, and transmission electron microscopy for homogeneity and composition. The intent of this research is to create a TiN film of known thickness, density, stoichiometry, and homogeneity that can be used by the semiconductor industry as a primary, traceable standard for characterization of industry thin films. The intent of the standard is to promote more accurate characterization and improved TiN manufacturing capabilities as well as to aid manufactures in more easily employing ISO 9000 related traceability and quality assurance practices.