Hostname: page-component-76fb5796d-vvkck Total loading time: 0 Render date: 2024-04-26T14:41:03.651Z Has data issue: false hasContentIssue false
  • English
  • Français

Development and Demonstration of a Two-Dimensional, Accurate and Computationally-Efficient Model for Boron Implantation into Single-Crystal Silicon Through Overlying Oxide Layers

Published online by Cambridge University Press:  21 February 2011

S. Morris ,
D. Lim ,
S.-H. Yang ,
S. Tian ,
K. Parab  and
A. F. Tasch
S. Morris
Affiliation:
University of Texas at Austin, Austin, TX 78712
D. Lim
Affiliation:
University of Texas at Austin, Austin, TX 78712
S.-H. Yang
Affiliation:
University of Texas at Austin, Austin, TX 78712
S. Tian
Affiliation:
University of Texas at Austin, Austin, TX 78712
K. Parab
Affiliation:
University of Texas at Austin, Austin, TX 78712
A. F. Tasch
Affiliation:
University of Texas at Austin, Austin, TX 78712
Get access

Abstract

A 2-D model for boron implantation into (100) silicon through overlying oxide layers has been developed and implemented into the process simulator FLOOPS. This model is both accurate and computationally efficient and shows explicit dependencies on all of the key implant parameters: energy, dose, tilt and rotation angles, oxide layer thickness, mask height, mask edge orientation, and rotation of the wafer during implantation.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 396: Symposium A – Ion-Solid Interactions for Materials Modification and Processing , 1995 , 27
Copyright
Copyright © Materials Research Society 1996

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1 Klein, K., Park, C., and Tasch, A., IEEE Trans. on Elec. Dev. 39, No. 7 (1992).Google Scholar
2 Yang, S.-H., Morris, S., Tian, S., Parab, K., and Tasch, A.F., IEEE Trans, on Semiconductor Manufacturing, (accepted).Google Scholar
3 Park, C., Klein, K., and Tasch, A., Solid-State Electronicss 33, No. 6, pp. 645–650 (1990).Google Scholar
4 Lim, D., Yang, S.-H., Morris, S., and Tasch, A., IEDM ‘93, 12.1.1 (1993).Google Scholar
5 Law, M. E., “FLOODS / FLOOPS Manual,” University of Florida (1993).Google Scholar