Hostname: page-component-77c89778f8-m8s7h Total loading time: 0 Render date: 2024-07-17T07:47:01.018Z Has data issue: false hasContentIssue false
  • English
  • Français

Deuterium Incorporation into Glow-Discharge Deposited Deuterated-Hydrogenated Amorphous Silicon

Published online by Cambridge University Press:  15 February 2011

L. S. Sidhu ,
F. Gaspari ,
S. K. O'Leary  and
S. Zukotynski
L. S. Sidhu
Affiliation:
Department of Electrical and Computer Engineering, University of Toronto, Toronto, Ontario, Canada M5S 1A4.
F. Gaspari
Affiliation:
Department of Electrical and Computer Engineering, University of Toronto, Toronto, Ontario, Canada M5S 1A4.
S. K. O'Leary
Affiliation:
Department of Electrical and Computer Engineering, University of Toronto, Toronto, Ontario, Canada M5S 1A4.
S. Zukotynski
Affiliation:
Department of Electrical and Computer Engineering, University of Toronto, Toronto, Ontario, Canada M5S 1A4.
Get access

Abstract

We investigate deuterium incorporation into deuterated-hydrogenated amorphous silicon grown by the saddle-field glow-discharge of deuterium and silane. The presence of HD and SiH3D in the discharge suggests strong gas phase mixing. The dominant process of deuterium incorporation into the growing film appears to be the direct reaction between deuterium and the growth surface.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 377: Symposium A – Amorphous Silicon Technology 1995 , 1995 , 87
Copyright
Copyright © Materials Research Society 1995

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

[1] Matsuda, A. and Hata, N., in Glow-Discharge Hydrogenated Amorphous Silicon, edited by Tanaka, K. (KTK Scientific, Tokyo, 1989), p. 9.Google Scholar
[2] Spear, W. E. and LeComber, P. G., in The Physics of Hydrogenated Amorphous Silicon, edited by Joannopoulos, J. D. and Lucovsky, G. (Springer-Verlag, New York, 1984), p. 63.Google Scholar
[3] Brodsky, M. H., Cardona, M. and Cuomo, J. J., Phys. Rev. B 16, 3556 (1977).Google Scholar
[4] Harry, M. and Zukotynski, S., J. Vac. Sci. A 9, 496 (1991).Google Scholar
[5] Turban, G., Catherine, Y., and Grolleau, B., Thin Solid Films 77, 287 (1981).Google Scholar
[6] Freeman, E. C. and Paul, W., Phys. Rev. B 18, 4288 (1978).Google Scholar
[7] Knights, J. C., Lucovsky, G., and Nemanich, R. J., Phil. Mag. B 37, 467 (1978).Google Scholar
[8] Sverdlov, L. M., Kovnner, M. A., and Krainov, E. P., in Vibrational Spectra of Polyatomic Molecules (Wiley, New York, 1974), p. 556.Google Scholar
[9] Kruzelecky, R. V., Racansky, D., Zukotynski, S., Gaspari, F., Ukah, C.I. and Perz, Ü.M., J. Non-Cryst. Solids 108, 115 (1989).Google Scholar