Hostname: page-component-76fb5796d-zzh7m Total loading time: 0 Render date: 2024-04-26T17:38:57.455Z Has data issue: false hasContentIssue false
  • English
  • Français

Deuterium in Crystalline and Amorphous Silicon

Published online by Cambridge University Press:  15 February 2011

R. Borzi ,
H. Ma ,
P. A. Fedders ,
D. J. Leopold ,
R. E. Norberg ,
J. B. Boyce ,
N. M. Johnson ,
S. E. Ready  and
J. Walker
R. Borzi
Affiliation:
Department of Physics, Washington University, One Brookings Drive, St. Louis, MO 63130, ren@howdy.wustl.edu
H. Ma
Affiliation:
Department of Physics, Washington University, One Brookings Drive, St. Louis, MO 63130, ren@howdy.wustl.edu
P. A. Fedders
Affiliation:
Department of Physics, Washington University, One Brookings Drive, St. Louis, MO 63130, ren@howdy.wustl.edu
D. J. Leopold
Affiliation:
Department of Physics, Washington University, One Brookings Drive, St. Louis, MO 63130, ren@howdy.wustl.edu
R. E. Norberg
Affiliation:
Department of Physics, Washington University, One Brookings Drive, St. Louis, MO 63130, ren@howdy.wustl.edu
J. B. Boyce
Affiliation:
Xerox PARC, Palo-Alto, CA 94304
N. M. Johnson
Affiliation:
Xerox PARC, Palo-Alto, CA 94304
S. E. Ready
Affiliation:
Xerox PARC, Palo-Alto, CA 94304
J. Walker
Affiliation:
Xerox PARC, Palo-Alto, CA 94304
Get access

Abstract

We report deuteron magnetic resonance (DMR) measurements on aged deuterium-implanted single crystal n-type silicon and comparisons with amorphous silicon spectra. The sample film was prepared six years ago by deuteration from a-D2 plasma and evaluated by a variety of experimental methods. Deuterium has been evolving with time and the present DMR signal shows a smaller deuteron population. A doublet from Si-D configurations along 〈111〉 has decreased more than have central molecular DMR components, which include 47 and 12 kHz FWHM gaussiane. Transient DMR magnetization recoveries indicate spin lattice relaxation to para-D2 relaxation centers.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 467: Symposium A – Amorphous and Microcrystalline Silicon Technology - 1997 , 1997 , 117
Copyright
Copyright © Materials Research Society 1997

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Boyce, J. B., Johnson, N. M., Ready, S. E., and Walker, J., Phys. Rev. B 46, 4308 (1992).Google Scholar
2. Volz, M. P., Santos-Filho, P., Conradi, M. S., Fedders, P. A., and Norberg, R. E., Phys. Rev. Lett. 63, 2582 (1989).Google Scholar
3. Boyce, J. B., Johnson, N. M., Ready, S. E., and Walker, J., Phys. Rev. B 46, 4308 (1992).Google Scholar
4. Bodart, J. R., Bork, V. P., Cull, T., Ma, H., Fedders, P. A., Leopold, D. J., and Norberg, R. E., Phys. Rev. B 54, 15291 (1996).Google Scholar