Hostname: page-component-77c89778f8-vsgnj Total loading time: 0 Render date: 2024-07-20T21:23:13.811Z Has data issue: false hasContentIssue false
  • English
  • Français

The Detrimental Effect of a Passivation on the Electromigration Lifetime of Narrow Al-Si-Cu Lines

Published online by Cambridge University Press:  15 February 2011

A. Witvrouw ,
Ph. Roussel ,
B. Deweerdt  and
K. Maex
A. Witvrouw
Affiliation:
IMEC, Kapeldreef 75, 3001 Leuven, Belgium
Ph. Roussel
Affiliation:
IMEC, Kapeldreef 75, 3001 Leuven, Belgium
B. Deweerdt
Affiliation:
IMEC, Kapeldreef 75, 3001 Leuven, Belgium
K. Maex
Affiliation:
IMEC, Kapeldreef 75, 3001 Leuven, Belgium
Get access

Abstract

2 mm long, 0.8 μm wide and 0.8 μ thick Al-Si-Cu lines, passivated with a 1.14 μm thick PETEOS SiO2 were found to have a lower electromigration lifetime compared to identical unpassivated lines. The high tensile stress in the passivated lines is assumed to accelerate electromigration failure. This is confirmed by the very low activation energy for electromigration failure in the passivated lines and by the multiple events of recovery during and after electromigration testing, suggesting failure sites are slit voids.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 391: Symposium T – Materials Reliability in Microelectronics V , 1995 , 447
Copyright
Copyright © Materials Research Society 1995

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1 Blech, I.A., JAP 47, 1203 (1976).Google Scholar
2 Lloyd, J.R. and Smith, P.M., J. Vac. Sci. Technol. A 1 (2), 455 (1983).Google Scholar
3 Yau, L., Hong, C. and Crook, D., Proc. 1985 IRPS, 115 (1985).Google Scholar
4 Okabayashi, H., Mat. Sci. Eng. R11 (5), 191–241 (1993).Google Scholar
5 Li, C.-Y., Børgesen, P. and Sullivan, T.D., Appl. Phys. Lett. 59, 1464 (1991).Google Scholar
6 Lytle, S.A. and Oates, A.S., JAP 71,174 (1992).Google Scholar
7 Lloyd, J.R., Mat. Res. Soc. Symp. Proc. 225,47 (1991).Google Scholar
8 ASTM Standard F1259-89, Annual Book of ASTM Standards, Vol. 10.04 (1989).Google Scholar
9 Colgan, E.G., Rodbell, K.P. and Vigliotti, D.R., Mat. Res. Soc. Symp. Proc. 309,423 (1993).Google Scholar
10 Witvrouw, A., unpublished resultsGoogle Scholar
11 Black, J.R., Proc. 6th IRPS, 148 (1967).Google Scholar
12 Lawless, J.F., Statistical Models and Methods for Lifetime Data, J. Wiley & Sons (1982).Google Scholar
13 Failure, Rocky Mountain Basic program, written by Roussel, Ph. (1993).Google Scholar
14 Kim, C. and Morris, J.W., JAP 72 (5), 1837–1845 (1992).Google Scholar
15 Colgan, E.G. and Rodbell, K.P., JAP 75 (7), 2423–3434 (1994).Google Scholar
16 Flinn, P.A., JAP 67 (6), 2927 (1990).Google Scholar
17 H.L, Peek and Wolters, R.A.M., Proc. 1986 VMIC Conf., 165 (1986).Google Scholar
18 Witvrouw, A., Proost, J., deweerdt, B., Roussel, Ph. and Maex, K., to be published in Mat. res. Soc. Symp. Proc. 356 (1995).Google Scholar