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Determination of Optimal Rapid Thermal Annealing Exposure Time and Pulse Rising Rate for Minimum Impurity Redistribution†

Published online by Cambridge University Press:  25 February 2011

Carlos A. Paz de Araujo  and
Tang Ting-Ao
Carlos A. Paz de Araujo
Affiliation:
Department of Electrical Engineering, University of Colorado at Colorado Springs
Tang Ting-Ao
Affiliation:
Department of Electronic Engineering, Fudan University, Shanghai, People's, Republic of China
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Abstract

A simple relationship for rapid thermal annealing exposure time for the case of annealing of boron and arsenic high dose shallow implants is found from first principles. The percentage of redistribution is found to be intrinsically dependent on exposure time and rate of temperature rise in the heat pulse. An upper bound of pulse rising rate for a given percentage tolerance in redistribution is also found. Extensive SIMS analysis shows very good agreement of these formulae with experimental data.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 45: Symposium A – Ion Beam Processes in Advanced Electronic Materials and Device Technology , 1985 , 361
Copyright
Copyright © Materials Research Society 1985

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Footnotes

†

Paper presented in symposium but not published.

References

† Paper presented in symposium but not published.