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Determination of Interface and Surface Structure During the Growth of a-Si:H-Based Heterostructures

Published online by Cambridge University Press:  26 February 2011

R. W. Collins  and
J. M. Cavese
R. W. Collins
Affiliation:
Standard Oil Research, 4440 Warrensville Center Road, Cleveland, OH 44128
J. M. Cavese
Affiliation:
Standard Oil Research, 4440 Warrensville Center Road, Cleveland, OH 44128
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Abstract

Ellipsometry measurements of hydrogenated amorphous silicon (a-Si:H)-based heterostructures have been used to characterize surfaces and single interfaces. From spectroscopic studies before and after plasma oxidation of a-Si:H, surface roughness on the atomic scal; (in the plane of the surface) can be distinguished from larger scale (> 100 Å) modulation. We also show how in situ studies of heterostructure preparation can be used to set deposition conditions to minimize near-interface layers owing to thickness dependent film properties. When these are eliminated, the discrepancies in the data from planar layer-bylayer growth models can be attributed to the larger scale surface and interface modulation. Finally, extensive deviations from planar growth for a-Si:H/μc-Si:H have been characterized in terms of specific heterogeneities.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 95: Symposium E – Amorphous Silicon Semiconductors--Pure and Hydrogenated , 1987 , 413
Copyright
Copyright © Materials Research Society 1987

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References

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