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Determination of Hydrogen in Semiconductors and Related Materials by Cold Neutron Capture Prompt Gamma-Ray Activation Analysis

Published online by Cambridge University Press:  22 February 2011

Rick L. Paul  and
Richard M. Lindstrom
Rick L. Paul
Affiliation:
Inorganic Analytical Research Division, National Institute of Standards and Technology, Gaithersburg, MD 20899
Richard M. Lindstrom
Affiliation:
Inorganic Analytical Research Division, National Institute of Standards and Technology, Gaithersburg, MD 20899
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Abstract

A reliable nondestructive method for measuring trace amounts of hydrogen in semiconductors and related materials has long been needed. Cold neutron capture prompt γ-ray activation analysis (CNPGAA) is a nondestructive, multielement technique which has found application in the measurement of trace amounts of hydrogen. The sample is irradiated by a beam of “cold” neutrons; the presence of hydrogen is confirmed by the detection of a 2223 keV gamma-ray. The technique gives bulk analyses (the neutron and gamma radiation penetrate the sample), the hydrogen peak is free of interferences, and the results are independent of the chemical form of hydrogen present. The instrument is capable of detecting less than 10 mg/kg of hydrogen in many matrices. We have used the technique to measure hydrogen levels in a dielectric film on a silicon wafer, semiconductor grade germanium, and quartz.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 324: Symposium K – Diagnostic Techniques for Semiconductor Materials Processing , 1993 , 403
Copyright
Copyright © Materials Research Society 1994

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