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Design of Heterostructures for High Efficiency Thermionic Emission

Published online by Cambridge University Press:  01 February 2011

Zhixi Bian
Affiliation:
zxbian@soe.ucsc.edu, University of California Santa Cruz, Electrical Engineering Department, 1156 High Street, Santa Cruz, CA, 95064, United States
Ali Shakouri
Affiliation:
ali@soe.ucsc.edu, University of California Santa Cruz, Electrical Engineering Department, United States
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Abstract

We use two heterostructure designs to improve the energy conversion efficiency of solid-state thermionic devices. The first method is to use a non-planar heterostructure with roughness in order of electron mean free path. This has some combined benefits of increased effective interface area, and reduced total internal reflection for the electron trajectories arriving at the interface. Monte Carlo simulations of various geometries show that the electrical conductivity and thermoelectric figure of merit can be improved for non-planar barrier compared to the planar counterpart. The second method is to use planar high barrier heterostructures with different effective masses for charge carriers in emitter and barrier regions. When an electron passes from a lower effective mass emitter and arrives at a barrier with higher effective mass, since both the lateral momentum and total energy are conserved, part of the lateral energy is coupled to the vertical direction and the electron gains momentum in the direction perpendicular to the interface to enter the barrier region. For high potential barriers, the improvement of thermionic current is about the same as the ratio of the effective masses of the two materials, which can be a factor of 5-10 for typical heterostructure material systems.

Type
Research Article
Copyright
Copyright © Materials Research Society 2006

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References

REFERENCES

1. Nolas, G. S., Sharp, J., and Goldsmid, H. J.. Thermoelectrics: Basic Principles and New Materials Developments (Springer, Berlin, 2001).Google Scholar
2. Shakouri, A., and Bowers, J., Appl. Phys. Lett. 71, 1234 (1997).Google Scholar
3. Mahan, G. D., and Woods, L. M., Phys. Rev. Lett. 80, 4016 (1998).Google Scholar
4. Ulrich, M. D., Barnes, P. A., and Vining, C. B., J. Appl. Phys. 90, 1625 (2001).Google Scholar
5. Chen, G., and Shakouri, A., Transactions of the ASME. Journal of Heat Transfer, 124, 242 (2002).Google Scholar
6. Huxtable, S. T., Abramson, A. R., Tien, C. L., Majumder, A., Labounty, C., Fan, X., Zeng, G., Bowers, J. E., Shakouri, A., and Croke, E. T., Appl. Phys. Lett. 80, 1737 (2002).Google Scholar
7. Vashaee, D., and Shakouri, A., Phys. Rev. Lett. 92, 106103 (2004).Google Scholar
8. Smith, D. L., Lee, E. Y., and Narayanamurti, V., Phys. Rev. Lett. 80, 2433 (1998).Google Scholar
9. Kozhevnikov, M., Narayanamurti, V., Zheng, C., Chiu, Y. J., and Smith, D. L., Phys. Rev. Lett. 82, 3677 (1999).Google Scholar
10. Schubert, F.. Ligh-Emitteing Diodes (Cambridge University Press, Cambridge, 2003).Google Scholar
11. Smoliner, J., Heer, R., Eder, C., and Strasser, G., Physical Review B, 58, R7516 (1998).Google Scholar
12. Kim, Kyoung-Youm, and Lee, Byoungho, J. Appl. Phys., 85, 7252 (1999).Google Scholar
13. Grinberg, Anatoly A., and Luryi, Serge, IEEE Trans. Electron Devices, 45, 1561 (1998).Google Scholar