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Design Consideration of GaN-Based Surface Emitting Lasers

Published online by Cambridge University Press:  10 February 2011

T. Honda ,
F. Koyama  and
K. Iga
T. Honda
Affiliation:
Precision and Intelligence Laboratory, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226, Japanthonda@pi.titech.ac.jp
F. Koyama
Affiliation:
Precision and Intelligence Laboratory, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226, Japanthonda@pi.titech.ac.jp
K. Iga
Affiliation:
Precision and Intelligence Laboratory, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226, Japanthonda@pi.titech.ac.jp
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Abstract

The threshold current density of GaN-based vertical cavity surface emitting lasers (VCSELs) has been estimated. It is clarified that the introduction of a quantum well structure as an active layer is very effective for a low threshold operation and that high reflective mirrors are required for low threshold GaN-based VCSELs. Also, attempts on micro-fabrication process of GaN is presented.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 449: Symposium N – III-V Nitrides , 1996 , 1151
Copyright
Copyright © Materials Research Society 1997

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References

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