Hostname: page-component-8448b6f56d-m8qmq Total loading time: 0 Render date: 2024-04-18T09:57:04.262Z Has data issue: false hasContentIssue false
  • English
  • Français

Deposition of Precursor Poly - Silicon Films for Flat Panel Display Applications

Published online by Cambridge University Press:  10 February 2011

R. Pethe ,
C. Deshpandey ,
S. Dixit ,
E. Demaray ,
D. Meakin ,
D. Orgill  and
N. Turner
R. Pethe
Affiliation:
Applied Komatsu Technology, Santa Clara, California
C. Deshpandey
Affiliation:
Applied Komatsu Technology, Santa Clara, California
S. Dixit
Affiliation:
Applied Komatsu Technology, Santa Clara, California
E. Demaray
Affiliation:
Applied Komatsu Technology, Santa Clara, California
D. Meakin
Affiliation:
Applied Komatsu Technology, Santa Clara, California
D. Orgill
Affiliation:
Applied Komatsu Technology, Santa Clara, California
N. Turner
Affiliation:
Applied Komatsu Technology, Santa Clara, California
Get access

Extract

Large grain poly-Silicon (p-Si) films have been evaluated for high speed TFT for flat panel displays [1,2]. It is expected that with good quality p-Si, “System on Glass” products, in which entire electronic circuitry is incorporated directly onto glass are achievable [3]. This approach therefore has the potential to fabricate Integrated AMLCD's (IAMLCD) and bypass conventional Si wafer based products and integrate CMOS circuits with direct view TFT LCD manufacturing. To realize this potential; it is necessary to develop a production process for depositing repeatable, good quality p-Si films on to large area glass substrates.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 471: Symposium G – Flat Panel Display Materials III , 1997 , 3
Copyright
Copyright © Materials Research Society 1997

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Oshima, H., Hashijuma, T., Matsuo, M., Inoue, S., Nakazawa, T., SID 93 Digest, pp 387, 1993.Google Scholar
2. Yamamoto, Y., Monta, T., Yamane, Y., Funada, F., Asia Display 95, pp941, 1995.Google Scholar
3. Status of Low Temperature Polysiicon TFT LCD Technology Development, Interlingua, Display Search, March 1997 Google Scholar
4. Tiller, W. A. in Science of Crystallization, Cambridge Univ. Press., N.Y., 1991.Google Scholar
5. Tsu, R., Hernandez, J., Doehler, J., Ovshinsky, S., Solid State Communications, Vol. 46, No. 1, pp 79–82, 1983.Google Scholar
6. Nakazawa, K., Tanaka, K., J. Appl. Phys., Vol. 68, No. 3, pp. 1029, 1 August 1990.Google Scholar
7. Noguchi, T., Tajima, K., Monta, Y., Mat. Res. Soc. Symp. Proc., Vol. 146, 1989.Google Scholar
8. Krikorian, E., Sneed, R.J., J. Appl. Phy., 37, 3665, 1996 Google Scholar
9. Bardin, T., Pronko, J., Joshi, A., Thin Solid films, 119, 429–438, 1984 Google Scholar