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Deposition of Polysilicon Films by Hot-Wire CVD at Low Temperatures for Photovoltaic Applications

Published online by Cambridge University Press:  15 February 2011

J. Puigdollers ,
J. Bertomeu ,
J. Cifre ,
J. Andreu  and
J. C. Delgado
J. Puigdollers
Affiliation:
Laboratori de Fisica de Capes Fines (LFCF), Departament de Física Aplicada i Electrónica, Universität de Barcelona, Av, Diagonal, 647, 08028-Barcelona, Spain.
J. Bertomeu
Affiliation:
Laboratori de Fisica de Capes Fines (LFCF), Departament de Física Aplicada i Electrónica, Universität de Barcelona, Av, Diagonal, 647, 08028-Barcelona, Spain.
J. Cifre
Affiliation:
Laboratori de Fisica de Capes Fines (LFCF), Departament de Física Aplicada i Electrónica, Universität de Barcelona, Av, Diagonal, 647, 08028-Barcelona, Spain.
J. Andreu
Affiliation:
Laboratori de Fisica de Capes Fines (LFCF), Departament de Física Aplicada i Electrónica, Universität de Barcelona, Av, Diagonal, 647, 08028-Barcelona, Spain.
J. C. Delgado
Affiliation:
Laboratori de Fisica de Capes Fines (LFCF), Departament de Física Aplicada i Electrónica, Universität de Barcelona, Av, Diagonal, 647, 08028-Barcelona, Spain.
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Abstract

Polysilicon (poly-Si) thin films have been obtained using hot-wire chemical vapor deposition (HWCVD) from silane-hydrogen mixtures. The films were prepared at low substrate temperatures (down to 200°C) and at very high deposition rates (up to 40 Å/s). They showed good crystalline properties and no amorphous phases were detected. The films can also be efficiently doped by adding diborane or phosphine to gas phase. In this paper, an overview of the properties of the poly-Si films, intrinsic and p and n-doped, deposited at our laboratory by HWCVD is presented and discussed. The properties of the material and the features of the deposition technique which are interesting for their application in photovoltaics are emphasized.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 377: Symposium A – Amorphous Silicon Technology 1995 , 1995 , 63
Copyright
Copyright © Materials Research Society 1995

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References

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