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Deposition of Heterogeneous Silicon Thin Films-Structure and Electric States-

Published online by Cambridge University Press:  17 March 2011

Isamu Shimizu
Isamu Shimizu*
Affiliation:
The InterdisciplinaryGraduate School of Science & Engineering, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama, Japan
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Abstract

Heterogeneous silicon thin films exhibited various microstructures were prepared by plasma enhanced(PE)-CVD from gaseous mixture of SiF4+H2 (SiH4) on glass substrate. Efficient parameters for controlling the microstructures were reviewed together with the way to grow crystalline seeds on glass by repeating the deposition and etching. Two step growth where polycrystalline silicon thin films were epitaxially grown on the seeds made on glass was proposed to accelerated the growth rate. The relationship between the microstructure and the carrier-transport properties are addressed, as well.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 609: Symposium A – Amorphous & Heterogeneous Silicon Thin Films – 2000 , 2000 , A32.1
Copyright
Copyright © Materials Research Society 2000

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References

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