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Deposition of Heavily-Doped μc-Silicon Thin Films by Remote Plasma-Enhanced Chemical-Vapor Deposition Process (remote PECVD)

Published online by Cambridge University Press:  25 February 2011

C. Wang ,
C.H. Bjorkman ,
D.R. Lee ,
M.J. Williams  and
G. Lucovsky
C. Wang
Affiliation:
Department of Physics, and Materials Science and Engineering, North Carolina State University, Raleigh, NC 27695-8202
C.H. Bjorkman
Affiliation:
Department of Physics, and Materials Science and Engineering, North Carolina State University, Raleigh, NC 27695-8202
D.R. Lee
Affiliation:
Department of Physics, and Materials Science and Engineering, North Carolina State University, Raleigh, NC 27695-8202
M.J. Williams
Affiliation:
Department of Physics, and Materials Science and Engineering, North Carolina State University, Raleigh, NC 27695-8202
G. Lucovsky
Affiliation:
Department of Physics, and Materials Science and Engineering, North Carolina State University, Raleigh, NC 27695-8202
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Abstract

We have succeeded in depositing both activated n- and p-type μc-Si, by a low temperature, 250°C, remote PECVD process in which dopant gases (PH3 or B2H6)/Silane (SiH4) mixtures are injected downstream from the exit port of a He/H2 plasma. The room temperature conductivities and activation energies for the n- and p-type μc-Si are respectively, 40 S/cm with Eaa=0.018 eV, and 5 S/cm with Ea =0.040 eV. Doped μc-Si is obtained for PH3/SiH4 ratios up to 1%, and for B2H6/SiH4 ratios to 0.1%. For B2H6/SiH4 ratios < 0.1%, the deposited p-type material is doped a-Si rather than doped μc-Si. We have shown that these heavily doped μc-Si film are a viable candidate for the gate electrode in MOS devices. The application of these doped μc-Si films in p-i-n diode devices has also been studied.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 204: Symposium E – Chemical Perspectives of Microelectronic Materials II , 1990 , 277
Copyright
Copyright © Materials Research Society 1991

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References

REFERENCES

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