Hostname: page-component-848d4c4894-2xdlg Total loading time: 0 Render date: 2024-06-24T17:34:03.625Z Has data issue: false hasContentIssue false
  • English
  • Français

Deposition of Gallium Nitride Films using Ammonia and Triethylgallium Seeded Helium Beams

Published online by Cambridge University Press:  21 February 2011

J. J. Sumakeris ,
R. K. Chilukuri ,
R. F. Davis  and
H. H. Lamb
J. J. Sumakeris
Affiliation:
Chemical Engineering, North Carolina State University, Raleigh, NC 27695-7905
R. K. Chilukuri
Affiliation:
Chemical Engineering, North Carolina State University, Raleigh, NC 27695-7905
R. F. Davis
Affiliation:
Materials Science and Engineering, North Carolina State University, Raleigh, NC 27695-7907
H. H. Lamb
Affiliation:
Chemical Engineering, North Carolina State University, Raleigh, NC 27695-7905
Get access

Abstract

Gallium nitride films have been deposited on Si(100) and Al2O3(0001) substrates using triethylgallium and ammonia seeded into highly expanded helium gas streams. A two step deposition process that reproducibly results in continuous crystalline GaN films has been developed. The microstructure and composition of the resultant films were characterized by scanning electron microscopy, reflection high energy electron diffraction and Auger electron spectroscopy and film character was correlated to deposition conditions.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 395: Symposium AAA – Gallium Nitride and Related Materials: The First International Symp , 1995 , 331
Copyright
Copyright © Materials Research Society 1996

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1 Nakamura, S., Jpn. J. Appl. Phys. 30, L1708.Google Scholar
2 Sitar, Z., Paisley, M J., Yan, B. and Davis, R. F., Thin Solid Films 200, 311 (1991).Google Scholar
3 Meng, W. J., Heremans, J. and Cheng, Y. T., Inst. Phys. Conf. Ser. 137, 409 (1993).Google Scholar
4 Engstrom, J. R., Hansen, D. A., Furjanic, M. J. and Xia, L. Q., J. Chem. Phys. 99, 4051 (1993).Google Scholar
5 McGuire, G. E., Semiconductor Materials and Process Technology Handbook, Noyes Publications (1988).Google Scholar