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Deposition of Diamondlike Carbon Films and Structural, Optical, and Electron Emission Characteristics

Published online by Cambridge University Press:  10 February 2011

S. W. Choi ,
M. C. Paek ,
J. H. Lee ,
S. U. Hong  and
K. S. Nam
S. W. Choi
Affiliation:
Electronics and Telecommunications Research Institute, Yusong P.O. Box 106, Taejon, Korea
M. C. Paek
Affiliation:
Electronics and Telecommunications Research Institute, Yusong P.O. Box 106, Taejon, Korea
J. H. Lee
Affiliation:
Electronics and Telecommunications Research Institute, Yusong P.O. Box 106, Taejon, Korea
S. U. Hong
Affiliation:
Electronics and Telecommunications Research Institute, Yusong P.O. Box 106, Taejon, Korea
K. S. Nam
Affiliation:
Electronics and Telecommunications Research Institute, Yusong P.O. Box 106, Taejon, Korea
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Abstract

We have deposited thin films of diamond-like-carbon by plasma enhanced chemical vapor deposition, and examined the electron emission characteristics of the optimized DLC-coated field emitters. The bonding spectra and microstractures are controlled by energetic ions depending on deposition parameters which affect the structural, optical, and electrical characteristics. Raman spectra and IR analysis identify that as-deposited DLC contains mixtures of sp2- and sp3-bonding with a wide range of hydrogen, but annealing causes its conversion to graphite structure due to a depletion of hydrogen. From the measurement of field emission characteristics, turn-on gate voltage is lowered to 50 V and anode current is increased for DLC-coated Si field emitter tip arrays.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 498: Symposium AA – Covalently Bonded Disordered Thin-Film Materials , 1997 , 159
Copyright
Copyright © Materials Research Society 1998

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References

REFERENCES

1. Kumar, N., Xie, C., Potter, N., Krishnan, A., Hilbert, C., Eichman, D., Schlam, E., Schmidt, H. and Wagel, S., SID 93 Digest, 1009 (1993).Google Scholar
2. Zhu, W., Kochanski, G.P., Jin, S. and Seibles, L., J. Vac. Sci. Technol., B14, 2011 (1996).Google Scholar
3. Jacob, W. and Moller, W., Appl. phys. Lett., 63, 1771 (1993).Google Scholar
4. Milne, W.I., J. Non-Cryst. Solids 198, 605 (1996).Google Scholar
5. Park, K.C., Moon, J.H., jang, J., and Oh, M.H., Appl. phys. Lett., 68, 3594 (1996).Google Scholar
6. Neuville, S. and Matthews, A., MRS Bulletin/September 22 (1997).Google Scholar
7. Akkerman, Z.L., Efstathiadis, H. and Smith, F.W., J. Appl. Phys. 80, 3068 (1996).Google Scholar
8. Tsai, H.C. and Bogy, D.B., J. Vac. Sci. Technol. A5, 3287 (1987).Google Scholar