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Deposition of Amorphous Carbon Films by Laser Induced CVD

Published online by Cambridge University Press:  26 February 2011

H. Tachibana ,
A. Nakaue  and
Y. Kavate
H. Tachibana
Affiliation:
Electronics Technology Center, Kobe Steel, Ltd., 5–5, Takatsukadai, 1-Choie, Nishi-Ku, Kobe, 673–02, Japan
A. Nakaue
Affiliation:
Electronics Technology Center, Kobe Steel, Ltd., 5–5, Takatsukadai, 1-Choie, Nishi-Ku, Kobe, 673–02, Japan
Y. Kavate
Affiliation:
Electronics Technology Center, Kobe Steel, Ltd., 5–5, Takatsukadai, 1-Choie, Nishi-Ku, Kobe, 673–02, Japan
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Abstract

Amorphous carbon (a-C) films were prepared by photodissociation of C2H3Cl or CCl4 gas using a pulsed ArF excimer laser (193nm). An increase in the substrate teiperature decreased the deposition rate. For C2H3Cl4 the maximum deposition rate of 10Å/min was attained at a partial pressure of 0.1 Torr and room temperature. In contrast, for CCl4, the maximum deposition rate of 10Å/Min was obtained at a partial pressure of 3 Torr and room temperature. This difference may be attributed to the different absorption cross sections for the two gases. The structural and mechanical properties were leasured. An Auger analysis showed the chlorine content in the a-C film deposited at room temperature to be 1% for C2H3Cl and 8% for CCl4. The Mohs hardnesses of the a-C filis deposited at room teiperature were 7 and 2 for C2H3Cl and CCl4, respectively. It was concluded that both sp2 and sp3 bonds existed between neighboring C atoms at low temperatures, whereas SP2 bond was predominant at temperatures higher than 300°C.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 101: Symposium B – Laser and Particle-Beam Chemical Processing for Microelectronics , 1987 , 367
Copyright
Copyright © Materials Research Society 1998

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References

REFERENCES

1 Aisemberg, S. and Chabot, R., J. APPI. Phys. 42, 2953 (1971).Google Scholar
2 Wada, N., Gaczi, P. J. and Solin, S. A., J. Non-Cryst. Solids 35–36, 543 (1980).Google Scholar
3 Miyasato, T., Kawakami, Y., Kawano, T. and Hiraki, A., Jpn. J. APPI. Phys. 23, L234 (1984).Google Scholar
4 Dischler, B., Babenger, A. and Koidl, P., Solid State Commun. 48, 105 (1983).Google Scholar
5 Bubenger, A., Dischler, B., Brandt, G. and Koidl, P., J. Appl. Phys. 54, 4590 (1983).Google Scholar
6 Coudere, P. and Catherine, Y., Thin Solid Films 146, 93 (1987).Google Scholar
7 Tachibana, H., Ohnishi, Y., Kajikawa, H., Hayashi, H., Nakaue, A. and Kawate, Y., Tech. Digest, 34th Spring Meeting of Jap. Soc. of Appl. Phys. 1987, 29p-K-4.Google Scholar
8 Yoshikawa, A. and Yamaga, S., Jpn. J. Appl. Phys. 23, L91 (1984).Google Scholar
9 Nishino, S., Honda, H. and Matsunami, H., Jpn. J. Appl. Phys. 25, L87(1986).Google Scholar
10 Yokoyama, S., Yamakage, Y. and Hirose, M., Extented Abstracts of 17th Conf. Solid State Devices and Materials, Tokyo, 25 (1985).Google Scholar
11 Kitahara, K., Kawai, H., Fujimori, N. and Iwai, T., Tech. Digest, 47th Fall Meeting of Jap. Soc. of Appl. Phys. 1986, 29p-ZD-3.Google Scholar
12 Yagi, T., Goto, Y. and Nagai, H., Tech. Digest, 47th Fall Meeting of Jap. Soc. of Appl. Phys. 1986, 29p-F-9.Google Scholar
13 Coudere, P. and Catherine, Y., Thin Solid Films 146, 93–107 (1987).Google Scholar