Hostname: page-component-848d4c4894-nmvwc Total loading time: 0 Render date: 2024-07-03T22:54:30.115Z Has data issue: false hasContentIssue false

The Deposition, Fabrication and Characteristics of High Critical Temperature Devices

Published online by Cambridge University Press:  28 February 2011

G. W. Morris
Affiliation:
Department of Materials Science and Metallurgy, University of Cambridge, Pembroke Street, Cambridge CB2 3QZ, UK.
M. G. Blamire
Affiliation:
Department of Materials Science and Metallurgy, University of Cambridge, Pembroke Street, Cambridge CB2 3QZ, UK.
R. E. Somekh
Affiliation:
Department of Materials Science and Metallurgy, University of Cambridge, Pembroke Street, Cambridge CB2 3QZ, UK.
E. J. Tomlinson
Affiliation:
Department of Materials Science and Metallurgy, University of Cambridge, Pembroke Street, Cambridge CB2 3QZ, UK.
J. E. Evetts
Affiliation:
Department of Materials Science and Metallurgy, University of Cambridge, Pembroke Street, Cambridge CB2 3QZ, UK.
Get access

Abstract

In the first section of this paper the sputter deposition of thin films of YBa2Cu3O7−x is considered. In the second section low and high temperature heat treatments are discussed in the light of the thermodynamics of the material and in the third the development, fabrication and current-voltage (IV) characteristics of a variety of device structures are described, including the hysterctic characteristics of certain YBa2Cu3O7−x / YBa2Cu3O7−x devices that reveal Josephson supcrcurrcnt tunnelling.

Type
Research Article
Copyright
Copyright © Materials Research Society 1988

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Kapitulnik, A., Oh, B., Naito, M., Char, K., Kent, A. D., Missert, N., Hellman, E., Amason, S., Hsu, J. W. P., Hahn, M. R., Rosenthal, P., Barton, R., Beasley, M. R., Geballe, T. H. and Hammond, R. H. To be published in High Tc Superconductors ICPT Trieste, Italy (1987)Google Scholar
2. Naito, M., Hammond, R. H., Oh, B., Hahn, M. R., Hsu, J. W. P., Naito, M., Hammond, R. H., Oh, B., Hahn, M. R., Hsu, J. W. P., Rosenthal, P., Marshall, A. F., Beasley, M. R., Geballe, T. H. and Kapitulnik, A. Submitted to J. Mat. Res. Google Scholar
3. Venkatesan, T., Chang, C. C., Dijkkamp, D., Oagle, S. B., Chase, E. W., Farrow, L. A., Hwang, D. M., Miceli, P. F., Schwarz, S. A., Tarascon, J. M., Wu, X. D. and Inam, A. Submitted to J. Appl. Phys. Google Scholar
4. Somekh, R. E., Blamire, M. G., Barber, Z. H., Butler, K., James, J. H., Morris, G. W., Tomlinson, E. J., Schwarzenberger, A. P., Stobbs, W. M. and Evetts, J. E. Nature 326, 6116 (1987)Google Scholar
5. Somekh, R. E., Highmore, R. J., Page, K. and Barber, Z. H. These proceedings paper D1.4Google Scholar
6. Evetts, J. E., Highmore, R. J., Tomlinson, E. J., Blamire, M. G., Głowacki, B. A., Somekh, R. E. and Greer, A. L. Proceedings of the European Workshop on High TQ Superconductors and Potential Applications (1987)Google Scholar
7. Naito, M., Smith, D. P. E., Kirk, M. D., Oh, B., Hahn, M. R., Char, K., Mitzi, D. B., Sun, J. Z., Webb, D. J., Beasley, M. R., Fischer, O., Geballe, T. H., Hammond, R. H., Kapitulnik, A. and Quate, C. F. Phys. Rev. B 35, 7228 (1987)Google Scholar
8. Pan, S., Ng, W. K., de Lozanne, A. L., Tarascon, J. M. and Greene, L. H. Phys Rev. B 35, 7220 (1987)Google Scholar
9. Hawley, M. E., Gray, K. E., Caponne, D. W. H. and Hinks, D. G. Phys. Rev. B 35, 7224 (1987)Google Scholar
10. van Bentum, P. J. M. Proc. E-MRS (Strasbourg) (1987)Google Scholar
11. Blamire, M. G., Somekh, R. E., Morris, G. W., Tomlinson, E. J. and Evetts, J. E. Proceedings of the European Workshop on High TQ Superconductors and Potential Applications (1987)Google Scholar
12. Blamire, M. G., Morris, G. W., Somekh, R. E. and Evetts, J. E. J. Phys. D: Appl. Phys. 20, 1330 (1987)Google Scholar