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Deposition, Defect and Weak Bond Formation Processes in a-Si:H

Published online by Cambridge University Press:  10 February 2011

J Robertson  and
M J Powell
J Robertson
Affiliation:
Engineering Dept, Cambridge University, Cambridge CB2 lPZ, UK
M J Powell
Affiliation:
Philips Research Labs, Redhill, Surrey RH1 5HA, UK
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Abstract

The growth of a-Si:H and the resulting weak bond and defect formation mechanism is analysed in terms of the adsorbed Sill3 model of growth. It is found that this model describes the surface processes well, but it needs further development to correctly describe the temperature dependence of the formation of defects and weak bonds, since the surface defect density decreases monotonically with temperature and does not show a minimum near 250C. We show that the experimentally observed increase in hydrogen content, weak bond and defect density at lower deposition temperatures can be accounted for by a hydrogen evolution reaction from H2* sites.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 507: Symposium A – Amorphous & Microcrystalline Silicon Technology 1998 , 1998 , 897
Copyright
Copyright © Materials Research Society 1998

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References

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