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Deposition, Annealing, and Characterization of Tantalum Pentoxide Films

Published online by Cambridge University Press:  22 February 2011

H. Treichel ,
A. Mitwalsky ,
G. Tempel ,
G. Zorn ,
W. Kern ,
N. Sandier  and
A. P. Lane
H. Treichel
Affiliation:
Siemens AG, Semiconductor Group, Process Engineering and Support, 6900Munich Germany
A. Mitwalsky
Affiliation:
Siemens AG, Corporate Research and Development, 8900 Munich, Germany
G. Tempel
Affiliation:
Siemens AG, Corporate Research and Development, 8900 Munich, Germany
G. Zorn
Affiliation:
Siemens AG, Corporate Research and Development, 8900 Munich, Germany
W. Kern
Affiliation:
Werner Kern Associates, East Windsor, 08520, NJ, USA
N. Sandier
Affiliation:
Lam Research Corporation, Fremont, 94538, CA, USA
A. P. Lane
Affiliation:
Texas Instruments, SPL, Dallas, 75265, TX, USA
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Abstract

Films of tantalum pentoxide (Ta2O5) have been fabricated by use of different precursor materials, deposition techniques and annealing procedures. Several analytical methods were appliedto study the layers. Fundamental properties and new data are reportedand related to practical features that are of importance in device design and manufacturing of advanced, highly integrated devices. This overview may facilitate the choice of an optimal combination of precursor, deposition technique and corresponding annealing procedure for aspecific application of these films in microelectronics, since the electrical properties reveal the potential of Ta2O5 films for the use in 64Mbit and 256Mbit DRAM devices as high dielectric constant material.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 282: Symposium E – Chemical Perspectives of Microelectronic Materials III , 1992 , 557
Copyright
Copyright © Materials Research Society 1993

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References

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