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Deposition and Characterization of Near “Intrinsic” μc-Si Films Deposited by Remote Plasma-Enhanced Chemical-Vapor Deposition - RPECVD

Published online by Cambridge University Press:  21 February 2011

M. J. Williams ,
C. Wang  and
G. Lucovsky
M. J. Williams
Affiliation:
Departments of Physics, andMaterials Science and Engineering North Carolina State University, Raleigh, NC 27695–8202
C. Wang
Affiliation:
Departments of Physics, andMaterials Science and Engineering North Carolina State University, Raleigh, NC 27695–8202
G. Lucovsky
Affiliation:
Departments of Physics, andMaterials Science and Engineering North Carolina State University, Raleigh, NC 27695–8202
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Abstract

Undoped films of μc-Si deposited by RPECVD are n-type with a room temperature dark conductivity of ∼6×10-4 S/cm and an activation energy of ∼0.3 eV. This is due to native donor-like defects. We report on the conductivity and photoconductivity of boron-doped μc-Si, with emphasis on low doping levels that are designed to compensate exactly these native donor-like defects. We describe the dark conductivity and the photoconductivity as functions of dark conductivity activation energy and the average boron concentration, and present a model for the photoconductivity based on band off sets between the crystalline and amorphous regions of the μc-Si.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 219: Symposium A – Amorphous Silicon Technology - 1991 , 1991 , 389
Copyright
Copyright © Materials Research Society 1991

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References

REFERENCES

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