Hostname: page-component-76fb5796d-dfsvx Total loading time: 0 Render date: 2024-04-26T09:32:26.626Z Has data issue: false hasContentIssue false
  • English
  • Français

Dependence of thermal stability of NiSi and Ni(Pt)Si /Si on crystal orientation

Published online by Cambridge University Press:  01 February 2011

Kazuya Okubo ,
Kazuo Kawamura ,
Shinich Akiyama ,
Yasutoshi Kotaka ,
Tsukasa Itani ,
Hirofumi Watatani ,
Kenichi Yanai ,
Masafumi Nakaishi  and
Masataka Kase
Kazuya Okubo
Affiliation:
ookubo.kazuya@jp.fujitsu.com, Fujitsu Limited, Device Development, Akiruno Technology Center, 50 Fuchigami,Akiruno, Tokyo, 197-0083, Japan
Kazuo Kawamura
Affiliation:
kawamura.kazuo@jp.fujitsu.com, Fujitsu Limited, Tokyo, 197-0833, Japan
Shinich Akiyama
Affiliation:
akiyama.shinich@jp.fujitsu.com, Fujitsu Limited, Tokyo, 197-0833, Japan
Yasutoshi Kotaka
Affiliation:
kotakay@jp.fujitsu.com, Fujitsu Laboratories, Tokyo, 197-0833, Japan
Tsukasa Itani
Affiliation:
itani@jp.fujitsu.com, Fujitsu Laboratories, Tokyo, 197-0833, Japan
Hirofumi Watatani
Affiliation:
watatani.hirofu@jp.fujitsu.com, Fujitsu Limited, Tokyo, 197-0833, Japan
Kenichi Yanai
Affiliation:
yanai.ken-ichi@jp.fujitsu.com, Fujitsu Limited, Tokyo, 197-0833, Japan
Masafumi Nakaishi
Affiliation:
nakaishi.masa23@jp.fujitsu.com, Fujitsu Limited, Tokyo, 197-0833, Japan
Masataka Kase
Affiliation:
kase.masataka@jp.fujitsu.com, Fujitsu Limited, Tokyo, 197-0833, Japan
Get access

Abstract

We report NiSi and Ni(Pt)Si films with excellent thermal stability showing a particular crystal orientation on Si(001). The Ni-silicide film with a deposition temperature of about 200 °C consists of a conformal domain structure. We examined detail crystallographic analysis of silicide and clarified the psudo-epitaxial growth of NiSi(202)//Si(220) [or NiSi(211)//Si(220)] was the key scheme of superior thermal stability. By using this optimized Ni-silicide formation process, we have fabricated Ni-silicide that is thermally stable up to 650 °C and shows low fluctuation in sheet resistance and low leakage current in electrical measurements. This process is a promising candidate for future silicidation technology.

Keywords

thin filmx-ray diffraction (XRD)crystallographic structure
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1079: Symposium N – Materials and Processes for Advanced Interconnects for Microelectronics , 2008 , 1079-N08-09
Copyright
Copyright © Materials Research Society 2008

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Lu, J. P. et al., IEDM Tech. Dig. 2002, (2002) 371 Google Scholar
2. Teodorescu, V. et al., J. Appl. Phys., 90 (2001) 167 Google Scholar
3. Park, K., et al., JES 2007, 154, H557 (2007).Google Scholar
4. Alberti, A., et al., Acta Crystallographica, B 61, 486 (2005).Google Scholar
5. Detavernier, C. et al., Appl. Phys. Lett., 84, 18 (2004).Google Scholar
6. Kim, G. B. et al., J. Vac. Sci. Technol. B 21, 319 (2003).Google Scholar
7. Chen, L. J. et al., Mater. Sci. Eng., R 29, 115 (2000).Google Scholar