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The Dependence of Aluminum/Tungsten Reaction on Crystalline Phases of Cvd Tungsten

Published online by Cambridge University Press:  25 February 2011

Y. Harada ,
H. Onoda  and
S. Madokoro
Y. Harada
Affiliation:
VLSI R&D Center, Oki Electric Industry Co., Ltd., 550–1 Higashi-asakawa, Hachioji, Tokyo 193, Japan
H. Onoda
Affiliation:
VLSI R&D Center, Oki Electric Industry Co., Ltd., 550–1 Higashi-asakawa, Hachioji, Tokyo 193, Japan
S. Madokoro
Affiliation:
VLSI R&D Center, Oki Electric Industry Co., Ltd., 550–1 Higashi-asakawa, Hachioji, Tokyo 193, Japan
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Abstract

The reaction between Al and CVD-W films has been studied. Al/α-W/Si and Al/β-W/Si structures were prepared by deposition on different Si substrates by changing deposition conditions using silane reduction of tungsten hexafluoride, followed by Al-Si-Cu alloy film sputter deposition. The sheet resistance of Al/α-W/Si structure is higher than that of Al/β-W/Si structure after 500°C annealing. RBS measurements show that the W diffusion into Al occurs in both structures after annealing, and the reaction between α-W and Al takes place easily compared with that between β-W and Al. This causes the sheet resistance difference. The activation energies for the W diffusion into Al, however, are almost the same in both structures. When CVD-W films are exposed to air after removal from the reactor, the sheet resistance of β-W film increases according to the exposure time, while that of α-W film does not. AES measurements indicate that the β-W film absorbs more oxygen than the α-W because of the difference of grain structures. The resistance increase of β-W film is caused by the oxygen that is absorbed from air. Our results indicate that the oxygen in the β-W layer suppresses the W diffusion into Al. Once the reaction begins, however, the diffusion into Al does not depend on crystalline phases of CVD-W.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 181: Symposium B – Advanced Metallizations in Microelectronics , 1990 , 615
Copyright
Copyright © Materials Research Society 1990

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References

REFERENCES

[1] Kaanta, C., Cote, W., Cronin, J., Holland, K., Lee, P-I., and Wright, T., Proc. of VLSI Multilevel Interconnection Conf.,p.21 IEEE cat. No. 88CH-2624–5, Santa Clara, CA, June 13–14, (1988).Google Scholar
[2] Moy, D., Schadt, M., Hu, C-K., Kaufman, F., Ray, A.K., Mazzeo, N., Baran, E., and Pearson, D.J., Pro. of VLSI Multilevel Interconnection Conf., p26 IEEE cat. No. 89TH-0259–2, Santa Clara, CA, June 12–13, (1989).Google Scholar
[3] Ohba, T., Inoue, S., and Maeda, M.. Proc.IEDM Tech.Dig., 213 (1987)Google Scholar
[4] Kotani, H., Tsutsumi, T., Komori, J., and Nagao, S., ibid., 217.Google Scholar
[5] Schmitz, J.E.J., Buiting, M.J., and Ellwanger, R.C., Proc. of the Workshop on Tungsten and Other Refractory Metals for VLSI Applications, edited by Blewer, R.S. and McConica, C.M. 27 (1988).Google Scholar
[6] Ohba, T., Suzuki, T., Hara, T., Furumura, Y., and Wada, K., ibid, 17.Google Scholar
[7] Tang, C.C. and Hess, D.W., Appl. Phys. Lett. 45, 633 (1984).CrossRefGoogle Scholar
[8] Hashimoto, K. and Onoda, H., Appl. Phys. Lett. 54, 120 (1989).CrossRefGoogle Scholar