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Density functional calculations of the binding energies and adatom diffusion on strained AlN (0001) and GaN (0001) surfaces

Published online by Cambridge University Press:  01 February 2011

Vibhu Jindal ,
James Grandusky ,
Neeraj Tripathi ,
Mihir Tungare  and
Fatemeh Shahedipour-Sandvik
Vibhu Jindal
Affiliation:
vjindal@uamail.albany.edu, University at Albany, College of Nanoscale Science and Engineering, 255 Fuller Road, University at Albany, Albany, NY, 12203, United States
James Grandusky
Affiliation:
grandujr@gmail.com, University at Albany, College of Nanoscale Science and Engineering, 255 Fuller Road, Albany, NY, 12203, United States
Neeraj Tripathi
Affiliation:
ntripathi@uamail.albany.edu, University at Albany, College of Nanoscale Science and Engineering, 255 Fuller Road, Albany, NY, 12203, United States
Mihir Tungare
Affiliation:
mtungare@uamail.albany.edu, University at Albany, College of Nanoscale Science and Engineering, 255 Fuller Road, Albany, NY, 12203, United States
Fatemeh Shahedipour-Sandvik
Affiliation:
sshahedipour@uamail.albany.edu, University at Albany, College of Nanoscale Science and Engineering, 255 Fuller Road, Albany, NY, 12203, United States
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Abstract

Density functional theory calculations were carried out to study the binding energies and diffusion barriers for various adatoms on AlN and GaN (0001) surfaces. The binding energies and potential energy surfaces were investigated for Al, Ga, and N adatoms on both Al (Ga) terminated and N terminated (0001) surfaces of AlN (GaN). Calculations for the diffusion paths and diffusion energy barriers for Al, Ga, and N adatoms on AlN and GaN were performed. It was found that the N adatom on N terminated AlN and GaN surfaces faces a high diffusion barrier due to strong N-N bond. The Al and Ga adatom on Al (Ga) terminated AlN (GaN) surfaces showed lower diffusion barriers due to the weak metallic bonds. However, the diffusion barrier for an Al adatom was always larger than that of a Ga adatom on any surface. The surfaces were also subjected to a hydrostatic compressive and tensile strain in the range of 0 to 5% to investigate the effect of strain on diffusion barriers. The diffusion energy barrier for N adatom on N terminated AlN and GaN surfaces decreased when the strain state was changed from tensile to compressive. In contrast, Al and Ga adatoms show continuous increase in diffusion barriers from tensile to compressively strained Al (Ga) terminated AlN (GaN) surfaces.

Keywords

III-Vkineticsnitride
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1040: Symposium Q – Nitrides and Related Bulk Materials , 2007 , 1040-Q06-02
Copyright
Copyright © Materials Research Society 2008

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