Hostname: page-component-848d4c4894-wzw2p Total loading time: 0 Render date: 2024-05-04T06:14:52.267Z Has data issue: false hasContentIssue false
  • English
  • Français

Demonstrating the Utility of Boron Based Precursor Molecules for Selective Area DepositIon in a Scanning Tunnelling Microscope

Published online by Cambridge University Press:  25 February 2011

F. Keith Perkins ,
M. Onellion ,
Sunwoo Lee  and
P.A. Dowben
F. Keith Perkins
Affiliation:
The Department of Physics and the Materials Science Program, University of Wisconsin, Madison, Wisconsin 53706
M. Onellion
Affiliation:
The Department of Physics and the Materials Science Program, University of Wisconsin, Madison, Wisconsin 53706
Sunwoo Lee
Affiliation:
The Department of Physics, Syracuse University, Syracuse, New York 13244
P.A. Dowben
Affiliation:
The Department of Physics, Syracuse University, Syracuse, New York 13244
Get access

Abstract

The scanning tunnelling microscope (STM) can be used to selectively deposit material from a gaseous precursor compound. Ultrasmall (less than a 100 nm across) spatial dimensions for selective area deposition may be achieved by this means. In this paper we outline a scheme forselecting and designing main group cluster compounds and organometallics for this type of selective area deposition using nido-decaborane(14) as an example.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 236: Symposium B – Photons and Low Energy Particles in Surface Processing , 1991 , 153
Copyright
Copyright © Materials Research Society 1992

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

[1] Dowben, P.A., Spencer, J.T., and Stauf, G.T., Mat. Sci. Engin. 82, 297 (1989).CrossRefGoogle Scholar
[2] Christensen, C.D. and Latkin, V.M., Appl. Phys. Lett. 32, 254 (1978); R.M. Osgood, Ann. Rev. Phys. Chem. 34, 77 (1983); T.J. Chuang, Surf. Sci. Repts. 3, 1 (1983); D.J. Ehrlich and J.Y. Tsao, J. Vac. Sci. Technol. B1, 969 (1983).Google Scholar
[3] Laser Chemical Processing for Microelectronics, edited by Ibbs, K.G. and Osgood, R.M., Cambridge Studies in Modern Optics vol. 7, (Cambridge University Press, Cambridge, 1989); Laser and Particle Beam Chemical Processing for Micro-electronics, edited by D.J. Ehrlich, G.S. Higashi, and R.M. Osgood (Mater. Res. Soc. Proc. 101, Pittsburgh, PA 1988).Google Scholar
[4] Silver, R.M., Ehrichs, E.E., and deLozanne, A.L., Appl. Phys. Lett. 51, 247 (1987); E.E. Ehrichs, R.M. Silver, and A.L. deLozanne, J. Vac. Sci. Technol. A6, 540 (1988); E.E. Ehrichs, S. Yoon, and A.L. deLozanne, Appl. Phys. Lett. 53, 2287 (1988).Google Scholar
[5] McCord, M.A. and Pease, R.F.W., J. Vac. Sci. Technol. B4, 86 (1986); J. Vac. Sci. Technol. B5, 430 (1987); J. Vac. Sci. Technol. 86, 293 (1988).Google Scholar
[6] Kim, Yoon-Gi, Dowben, P.A. and Spencer, J.T., J. Vac. Sci. Technol. A7, 2796 (1989).Google Scholar
[7] Perkins, F. Keith, Rosenberg, R.A., Lee, Sunwoo and Dowben, P.A., J. Appl. Phys. 69, 4103 (1991).Google Scholar
[8] Rosenberg, R.A., Perkins, F.K., Mancini, D.C., Harp, G.R., Tonner, B.P., Lee, S. and Dowben, P.A., Appl. Phys. Lett. 58, 607 (1991).Google Scholar
[9] Avouris, Ph., J. Phys. Chem. 94, 2246 (1990).Google Scholar
[10] Avouris, Ph., Lyo, In-Whan, Bozso, F., and Kaxiras, E., J. Vac. Sci. Technol., A8, 3405 (1990).Google Scholar
[11] Perkins, F. Keith, Onellion, M., Lee, S., Li, D., Mazurowski, J. and Dowben, P.A., submitted.Google Scholar
[12] Kendall, D.S. and Lipscomb, W.N., Inorg. Chem. 12, 546 (1973); L.J. Gugenberger, J. Amer. Chem. Soc. 94, 114 (1972); A. Tippe and W.C. Hamilton, Inorg. Chem. 8, 464 (1969).Google Scholar
[13] Dewar, M.J.S., McKee, M.L., J. Am. Chem. Soc. 99, 4899 (1977); M.J.S. Dewar, M.L. McKee, H.S. Rzepa, J. Am. Chem. Soc. 100, 3607 (1978); M.J.S. Dewar, J. Friedheim, G. Grady, E.H. Healy, J.J.P. Stewart, Organometallics 5, 385 (1986). M.J.S. Dewar, H.S. Rzepa, J. Comp. Chem. 4, 158 (1983); J.J.P. Stewart, F.J. Seiler, Quantum Chem. Program Exch., Prgm. no. 549.Google Scholar
[14] Hitchcock, A.P., Wen, A.T., Lee, S., Glass, J.A., Spencer, J.T. and Dowben, P.A., in preparationGoogle Scholar
[15] Hosmane, N.S., Grimes, R.N., Inorg. Chem. 18, 3294 (1979); R.B. Maynard, L. Borodinsky, and R.N. Grimes, Inorg. Synthesis H2, 211 (1983); M.E. Fessler, J.T. Spencer, J.F. Lomax, R.N. Grimes, Inorg. Chem. 27, 3069 (1988).Google Scholar
[16] Rowe, E.M., Nucl. Intrum. Meth. in Phys. Res. B56/57, 392 (1991).Google Scholar
[17] Higashi, G.S., Chabal, Y.J., Trucks, G.W., and Raghavachari, K., Appl. Phys. Lett. 56, 656 (1990).Google Scholar