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Delamination of LPD Tungsten Films by Residual Stress

Published online by Cambridge University Press:  22 February 2011

A. Borer
Affiliation:
Department of Metallurgy and Science of Materials, Oxford University, Parks Road, Oxford OXi 3PH, U.K.
B. Derby
Affiliation:
Department of Metallurgy and Science of Materials, Oxford University, Parks Road, Oxford OXi 3PH, U.K.
I. May
Affiliation:
GEC Research Limited, Hirst Research Centre, East Lane, Wembley, Middlesex HA9 7PP, U.K.
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Abstract

Thin tungsten films have been deposited on sapphire and glass substrates using laser photolytic deposition from a tungsten hexa-fluoride precursor. Failure of the films is caused by the presence of large residual stresses (1–5 GPa). Compressive and tensile stresses are found at different stages of film growth and either may be responsible for delamination. Early compression is caused by oxidation and impurity influenced intrinsic stress. Tensile stress occurs with microstructural changes but is not maintained with film growth. Large stress gradients, indicative of up to 0.75–1.2% lattice strain difference across the film, are found through both compressive and tensile films and are not explained.

Type
Research Article
Copyright
Copyright © Materials Research Society 1989

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