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Degradation of Photoluminescence Efficiency in GaAs Under Low Intensity Laser Irradiation

Published online by Cambridge University Press:  21 February 2011

M. Yasin ,
A. Raja ,
Steven R. J. Brueck ,
Marek Osinski  and
John G. Mclnerney
M. Yasin
Affiliation:
Center for High Technology Materials, University of New Mexico, Albuquerque, NM 87131
A. Raja
Affiliation:
Center for High Technology Materials, University of New Mexico, Albuquerque, NM 87131
Steven R. J. Brueck
Affiliation:
Center for High Technology Materials, University of New Mexico, Albuquerque, NM 87131
Marek Osinski
Affiliation:
Center for High Technology Materials, University of New Mexico, Albuquerque, NM 87131
John G. Mclnerney
Affiliation:
Center for High Technology Materials, University of New Mexico, Albuquerque, NM 87131
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Abstract

We report temporal measurements of bandgap photoluminescence (PL) from GaAs surfaces under low-intensity CW laser excitation. We have observed slow PL degradation in n-type, p-type and semi-insulating (Cr-doped and LEC-grown) samples, and have fit the data to a simple power law. Calculations indicate a significant contribution from the bulk material, possibly via recombination-enhanced generation or migration of non-radiative centers. The effectiveness of various methods of surface treatment (photowashing, deposition of epitaxial AlGaAs, spin-coating with organic and inorganic sulfide films) has been assessed. One specific technique, involving coating with sodium sulfide, is effective in enhancing the PL efficiency and suppressing the degradation, but these effects are not permanent.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 126: Symposium P – Advanced Surface Processes for Optoelectronics , 1988 , 265
Copyright
Copyright © Materials Research Society 1988

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References

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