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Degradation of InGaAs High Electron Mobility Transistors: The Role of Channel Composition and Thickness

Published online by Cambridge University Press:  26 February 2011

Marjohn Meshkinpour ,
Mark S. Goorsky ,
Dwight C. Streit ,
Thomas R. Block  and
Mike Wojtowicz
Marjohn Meshkinpour
Affiliation:
University of California, Los Angeles, CA 90024
Mark S. Goorsky
Affiliation:
University of California, Los Angeles, CA 90024
Dwight C. Streit
Affiliation:
TRW Space and Electronics Group, Redondo Beach, CA 90278
Thomas R. Block
Affiliation:
TRW Space and Electronics Group, Redondo Beach, CA 90278
Mike Wojtowicz
Affiliation:
TRW Space and Electronics Group, Redondo Beach, CA 90278
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Abstract

In this study, we examined the performance of AlGaAs/InGaAs/GaAs pseudomorphic high electron mobility transistors with varying channel layer thicknesses for indium mole fractions of 0.21 and 0.24. For both compositions, we find that there is an optimum channel thickness above which the device performance is impaired. As expected the effective critical thickness of the In0.2iGa0.79As layer is higher. Surprisingly, however, transmission electron microscopy of the device structures indicates that the device performance is not impaired by the presence of a linear array of misfit dislocations. In fact, the devices with highest performance have misfit dislocations indicating that defect engineering may lead to improved performance in these structures. Furthermore, we find that device structures with poor performance have misfit dislocations along both of the <110> directions. Triple axis x-ray diffraction provides a non-destructive estimate of the dislocation densities present.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 378: Symposium B – Defect and Impurity-Engineered Semiconductors and Devices , 1995 , 783
Copyright
Copyright © Materials Research Society 1995

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