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Degradation and Recovery of Boron Doped Strained Silicon Germanium Layers After 1-MeV Electron Irradiation

Published online by Cambridge University Press:  25 February 2011

H. Ohyama ,
J. Vanhellemont ,
M.-A. Trauwaert ,
J. Poortmans ,
M. Caymax  and
P. Clauws
H. Ohyama
Affiliation:
Interuniversity Micro-Electronics Centre (IMEC), Kapeldreef 75, B-3001 Leuven, Belgium.
J. Vanhellemont
Affiliation:
Interuniversity Micro-Electronics Centre (IMEC), Kapeldreef 75, B-3001 Leuven, Belgium.
M.-A. Trauwaert
Affiliation:
Interuniversity Micro-Electronics Centre (IMEC), Kapeldreef 75, B-3001 Leuven, Belgium.
J. Poortmans
Affiliation:
Interuniversity Micro-Electronics Centre (IMEC), Kapeldreef 75, B-3001 Leuven, Belgium.
M. Caymax
Affiliation:
Interuniversity Micro-Electronics Centre (IMEC), Kapeldreef 75, B-3001 Leuven, Belgium.
P. Clauws
Affiliation:
RUG, Krijgslaan 281 S1, B-9000 Gent, Belgium.
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Abstract

1007×100 μm2 n+− Si/p-Si1−x Gex diodes fabricated on conventional p-type Si substrates are irradiated at room temperature with 1-MeV electrons with fluences from 1.0×1014 to 1.0×1015 e/cm2 in a high voltage transmission electron microscope. The boron concentration and germanium fraction of the Si1−x Gex epitaxial layer used for the diodes in this study are 5×1017 cm−3 and x = 0.12, respectively. The degradation of diodes is investigated by means of current/voltage and capacitance/voltage measurements. The characteristics of the electrically active defects induced in the Si1−x Gex epitaxial layer by irradiation are also examined by using deep level transient spectroscopy and capacitance/temperature measurements. The degradation of the diode performance and the presence of deep levels are investigated as a function of electron fluence. In order to examine the recovery process, an isochronal thermal anneal is performed in the temperature range between 100 and 400°C.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 281: Symposium D – Semiconductor Heterostructures for Photonic and Electronic Applications , 1992 , 433
Copyright
Copyright © Materials Research Society 1993

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References

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