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Defects Induced by Electron Bombardment and Substrate Doping in SiO2 Thin Films

Published online by Cambridge University Press:  22 February 2011

P. Xiong-Skiba ,
D. L. Carroll ,
D. L. Doering  and
K. H. Siek
P. Xiong-Skiba
Affiliation:
Physics Department, Wesleyan University, Middletown, CT 06459–0155
D. L. Carroll
Affiliation:
Physics Department, Wesleyan University, Middletown, CT 06459–0155
D. L. Doering
Affiliation:
Physics Department, Wesleyan University, Middletown, CT 06459–0155
K. H. Siek
Affiliation:
Physics Department, Wesleyan University, Middletown, CT 06459–0155
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Abstract

Thin SiO2 films grown on silicon substrates were exposed to electron beam irradiation at energies from 100 eV to 2.5 KeV. Then, thermally stimulated exoelectron emission (TSEE) spectra were taken by heating the sample linearly to a maximum temperature of 600°C. We have compared the emission behavior from oxides grown on both n-typeand p-type, (100) and (111) silicon wafers. The TSEE spectra show emission peaks whichcan be categorized by their behavior into two groups. The β emission peaks are characteristic of emission from localized electron traps while the γ emission peaks result from the annealing of beam-induced defects. We have observed changes in the β peaks which appear to be associated with the concentration of dopants in the substrate material. In addition, we have identified a beam energy threshold near the oxygen Is binding energy for the creation of defects. This suggests that defect creation results froman electronic transition similar to electron stimulated desorption.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 284: Symposium G – Amorphous Insulating Thin Films , 1992 , 275
Copyright
Copyright © Materials Research Society 1993

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References

REFERENCES

1. Robertson, J., in The Physics and Technology of Amorphous SiO2 , edited by Devine, R. A. B. (Plenum Press, New York, 1988) p. 113.Google Scholar
2. Baragiola, Raul A., Madey, Theodore E. and Lanzillotto, Ann-Marie, Phys Rev. B41, 9541 (1990).Google Scholar
3. Feibelman, P. J. and Knotek, M. L., Phys. Rev. B18, 6531 (1978).Google Scholar
4. Pfeffer, R. L., J. Appl. Physics, 57 (12), 15 (1985).Google Scholar
5. Xiong-Skiba, P., Carroll, D. L. and Doering, D. L., J. Vac. Sci. Technol. A8, 1549 (1990).Google Scholar
6. Carroll, D. L., Doering, D. L. and Xiong-Skiba, P., J. Vac. Sci. Technol A11, (1993) submitted for publication.Google Scholar
7. Doering, D. L. and Blais, B. S., presented at the 39th Nat. Symp. of the AVS, 1992, (unpublished).Google Scholar
8. Menzel, D., in Desorption Induced by electronic Transitions Diet I, edited by Tolk, N. H., Traum, M. M., Tully, J. C. and Madey, T. E. (Springer-Verlag New York, 1983) p. 53.Google Scholar
9. Deal, B. E. and Grove, A. S., J. Appl. Phys. 36 (12), 3770 (1965).Google Scholar