Hostname: page-component-848d4c4894-ndmmz Total loading time: 0 Render date: 2024-05-04T06:23:59.024Z Has data issue: false hasContentIssue false
  • English
  • Français

Defects, Entropy, and Melting of Amorphous Silicon

Published online by Cambridge University Press:  26 February 2011

Sjoerd Roorda  and
Wim C. Sinke
Sjoerd Roorda
Affiliation:
FOM-Institute for Atomic and Molecular Physics, Kruislaan 407, 1098 SJ Amsterdam, The Netherlands
Wim C. Sinke
Affiliation:
FOM-Institute for Atomic and Molecular Physics, Kruislaan 407, 1098 SJ Amsterdam, The Netherlands
Get access

Extract

Structural relaxation of amorphous Si (a-Si) is thought to be fully controlled by annihilation of point defects quenched in during preparation. The density of defects in unrelaxed a-Si is estimated from a wide variety of published experimental data to amount to several atomic %. The enthalpic and entropic contributions of these defects to the excess Gibbs free energy difference of a-Si over c-Si is estimated. The variation in free energy due to defects may lead to afurther melting temperature depression of 40 - 200 K for unrelaxed a-Si in addition to the 200 K depression already present between c-Si and relaxed a-Si.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 205: Symposium F – Kinetics of Phase Transformations , 1990 , 9
Copyright
Copyright © Materials Research Society 1992

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1 Roorda, S., Poate, J.M., Jacobson, D.C., Eaglesham, D.J., Dennis, B.S., Dierker, S., Sinke, W.C., and Spaepen, F., Solid State Comm. 75, 197 (1990).CrossRefGoogle Scholar
2 Polman, A., Jacobson, D.C., Coffa, S., Poate, J.M., Roorda, S., and Sinke, W.C., Appl. Phys. Lett. 57, 1230 (1990).Google Scholar
3 Roorda, S., Sinke, W.C., Poate, J.M., Jacobson, D.C., Dierker, S., and Dennis, B.S., Appl. Phys. Lett. 56, 2097 (1990).CrossRefGoogle Scholar
4 Spaepen, F. and Turnbull, D., in ‘Laser-Solids Interactions and Laser Processing’, Eds. Ferris, S.D., Leamy, H.J., and Poate, J.M., Am. Inst. Phys. Conf. Proc. 50, 73 (1979); and B.G. Bagley and H.S. Chen, page 97.Google Scholar
5 Thompson, M.O., Galvin, G.J., Mayer, J.W., Peercy, P.S., Poate, J.M., Jacobson, D.C., Cullis, A.G., and Chew, N.G., Phys. Rev. Lett. 52, 2360 (1984).CrossRefGoogle Scholar
6 Sinke, W.C., Warabisako, T., Miyao, M., Tokuyama, T., Roorda, S., and Saris, F.W., J. Non-Cryst. Solids 99, 308 (1988).Google Scholar
7 Sinke, W.C., Roorda, S., and Saris, F.W., J. Mater. Res. 3, 1201 (1988).Google Scholar
8 Thompson, M.O., Mater. Res. Soc. Symp. Proc. Vol. 157, 355 (1990).Google Scholar
9 Grimaldi, M.G. and Baeri, P., Appl. Phys. Lett. 57, 614 (1990).CrossRefGoogle Scholar
10 Olson, G.L. and Roth, J.A., Mater. Science Reports 3, 1 (1988).Google Scholar
11 Custer, J.S., Thompson, M.O., Jacobson, D.C., Poate, J.M., Roorda, S., Sinke, W.C., and Spaepen, F., Mater. Res. Soc. Symp. Proc. 157, 689 (1990).Google Scholar
12 Roorda, S., Sinke, W.C., Poate, J.M., Jacobson, D.C., Dierker, S., Dennis, B.S., Eaglesham, D.J., Spaepen, F., and Fuoss, P., submitted.Google Scholar
13 Dannefaer, S., Mascher, P., and Kerr, D., Phys. Rev. Lett. 56, 2195 (1986).CrossRefGoogle Scholar
14 Coffa, S., Poate, J.M., Jacobson, D.C., and Polman, A., Appl. Phys. Lett. (in press).Google Scholar
15 Heidemann, K.F., Grilner, M., and Kaat, E. te, Rad. Eff. 82, 103 (1984).Google Scholar
16 Hautojärvi, P., Huttunen, P., Mäkinen, J., Punka, E., and Vehanen, A., Mater. Res. Soc. Symp. Proc. 104, 105 (1988).Google Scholar
17 Dannefaer, S., Kerr, D., and Hogg, B.G., J. Appl. Phys. 54, 155 (1983).CrossRefGoogle Scholar
18 Stolk, P.A., Roorda, S., Calcagnile, L., Sinke, W.C., van, H.B. Linden van den Heuvell, and Saris, F.W., These Proceedings.Google Scholar
19 Spitzer, W.G., Hubler, G.K., and Kennedy, T.A., Nucl. Instr. and Meth. 209/210, 309 (1983).Google Scholar
20 Chen, H.S. and Turnbull, D., J. Appl. Phys. 40, 4214 (1969).CrossRefGoogle Scholar
21 Spaepen, F., Phil. Mag. 30, 417 (1974).CrossRefGoogle Scholar
22 Donovan, E.P., Spaepen, F., Turnbull, D., Poate, J.M., and Jacobson, D.C., J. Appl. Phys. 57, 1795 (1985).CrossRefGoogle Scholar
23 Greer, A.L., J. Less-Common Metals 145, 131 (1988).CrossRefGoogle Scholar
24 Yater, J.A. and Thompson, M.O., Phys. Rev. Lett. 63, 2088 (1989).Google Scholar