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Defects, Dislocations and Degradation of Compound Semiconductors

Published online by Cambridge University Press:  15 February 2011

W. Dexter Johnston Jr.
W. Dexter Johnston Jr.*
Affiliation:
Bell Laboratories, Murray Hill, New Jersey 07974
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Abstract

Diode lasers and/or LEDs fabricated from the Ga1 − xAlxAs/GaAs or In1 −xGaxAsyP1−y alloy system provide the basis for rapidly developing optical communications systems. These devices are operated at very high optical and electrical power densities, and the inevitable less-than-perfect efficiency results in intense local thermal and athermal lattice excitation. This in turn can lead to generation, motion and growth of extended defect structures including dislocation networks, precipitation of impurities, or phase separation.

For the AlxGa1−xAs material, a predominant degradation effect is the development of so-called <100> “dark line defects” (DLDs). These have been shown to arise from recombination enhanced climb of threading dislocations giving rise to dipole loops of a primarily interstitial character. A less common form, the <110> DLDs, is associated with slip and typically arises from the strain associated with mechanical damage or careless handling or device processing.

The In1−xGaxAsyP 1−y device material affords less energy per recombina ion event by virtue of its smaller band-gaps, but is likely to have more lattice mismatch strain than Ga1−xAlxAs for typical compositions of device interest. Thus slip, <110> DLDs, and precipitates are the commonly observed features of In1−xGaxAsyP1−y degradation.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 14: Symposium B – Defects in Semiconductors II , 1982 , 453
Copyright
Copyright © Materials Research Society 1982

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