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Defect-Related Photoluminescence of a-Si:H

Published online by Cambridge University Press:  16 February 2011

Isabell Ulber ,
Axel Barth ,
Walther Fuhs  and
Helmut Mell
Isabell Ulber
Affiliation:
Fachbereich Physik und Wissenschaftliches Zentrum für Materialwissenschaften, Philipps-UniversitäT Marburg, Renthof 5, D-35032 Marburg, Germany
Axel Barth
Affiliation:
Fachbereich Physik und Wissenschaftliches Zentrum für Materialwissenschaften, Philipps-UniversitäT Marburg, Renthof 5, D-35032 Marburg, Germany
Walther Fuhs
Affiliation:
Fachbereich Physik und Wissenschaftliches Zentrum für Materialwissenschaften, Philipps-UniversitäT Marburg, Renthof 5, D-35032 Marburg, Germany
Helmut Mell
Affiliation:
Fachbereich Physik und Wissenschaftliches Zentrum für Materialwissenschaften, Philipps-UniversitäT Marburg, Renthof 5, D-35032 Marburg, Germany
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Abstract

The defect-related photoluminescence (0.8–0.9eV) of a-Si:H is studied as a function of the defect density ND and the temperature using subgap excitation of Ex= 1.16eV. Electron bombardment, light exposure and phosphorus doping were employed to create defects. The defect density ND was infered from CPM- and PDS-spectroscopy. We conclude from the measured density-of-states distributions of doped films that the radiative process is tunneling of bandtail carriers (Majority carriers) into the defect states. The dependence of the emission intensity on ND suggests that only a subgroup of the defects acts as radiative center. We propose that the local structure of the defect determines whether it acts as radiative or nonradiative center.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 336: Symposium A – Amorphous Silicon Technology - 1994 , 1994 , 141
Copyright
Copyright © Materials Research Society 1994

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References

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