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Defect Structure of MEV Si Implantation in GaAs

Published online by Cambridge University Press:  21 February 2011

S.-Tong Lee ,
G. Braunstein  and
Samuel Chen
S.-Tong Lee
Affiliation:
Corporate Research Laboratories, Eastman Kodak Company, Rochester, New York 14650.
G. Braunstein
Affiliation:
Corporate Research Laboratories, Eastman Kodak Company, Rochester, New York 14650.
Samuel Chen
Affiliation:
Corporate Research Laboratories, Eastman Kodak Company, Rochester, New York 14650.
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Abstract

The defect and atomic profiles for MeV implantation of Si in GaAs were investigated using He++ channeling, TEM, and SIMS. Doses of 1–10 × 1015Si/cm2 at 1–3 MeV were used. MeV implantation at room temperature rendered only a small amount of lattice disorder in GaAs. Upon annealing at 400°C for 1 h or 800°C for 30 a, we observed a ‘defect-free’ surface region (- 1 μ for 3 MeV implant). Below this region, extensive secondary defects were formed in a band which was 0.7 μ wide and centered at 2 μ for 3 MeV implant. These defects were mostly dislocations lying in the [111] plane. SIMS depth profiles of Si implants showed the Si peak to be very close to the peak position of the defects. The experimental profiles of Si were compared to the TRIM calculation; generally good agreement existed among the peak positions.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 126: Symposium P – Advanced Surface Processes for Optoelectronics , 1988 , 183
Copyright
Copyright © Materials Research Society 1988

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References

REFERENCES

1. International Workshop on High Energy Implantation into Semiconductors and Superconductors, Aug. 25–26, 1987, Boston, Ma.Google Scholar
2. Pramanik, D. and Current, M.I., Solid State Technol, 27 211 (1984).Google Scholar
3. Cheung, N.W., SPIE, 530, 1 (1985).Google Scholar
4. Krowne, C.M. and Thompson, P.E., Solid-State Electronics, 30 497 (1987).Google Scholar
5. Thompson, P.E., Dietrich, H., Anand, Y., Higgins, V., and Hillson, J., Electron. Lett., 23, 725 (1987).Google Scholar
6. Thompson, P.E., Dietrich, H.B., and Ingram, D.C., Nucl. Instrum. Meth., B6, 287 (1985).Google Scholar
7. Biersack, J.P. and Haggmark, L.G., Nucl. Instrum. Meth., 174, 257 (1980)CrossRefGoogle Scholar
8. Braunstein, G. and Lee, S.-Tong, unpublished results.Google Scholar
9. Sadana, D.K. and Booker, G.R., Radiat. Eff. 42 35 (1979).Google Scholar
10. Byrne, P.F., Cheung, N.W., and Sadana, D.K., Appl. Phys. Lett, 41, 537 (1982).Google Scholar
11. Tamura, M., Natsuaki, N., Wada, Y., and Mitani, E., Nucl. Instrum. Meth, B21 438 (1987) and references therein.Google Scholar
12. Thompson, P.E., Wilson, R.G., Ingram, D.C., and Pronko, P.P., Mat. Res. Soc. Symp. Proc.,, 93 73 (1987)Google Scholar
13. Rai, A.K., Baker, J., and Ingrain, D.C., Appl. Phys. Lett. 51, 172 (1987) and references therein.Google Scholar
14. Pearton, S J., Hull, R., Jacobson, D.C., Poate, J.M., and Williams, J.S., Appl. Phys. Lett., 48, 38 (1986).Google Scholar
15. Opyd, W.G., Gibbons, J.F., Bravman, J.C., and Parker, M.A., Appl. Phys. Lett, 49 974 (1986).Google Scholar