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Defect States in Boron and Phosphorus Doped a-Si:Ge:H Alloys

Published online by Cambridge University Press:  26 February 2011

F. Finger  and
W. Fuhs
F. Finger
Affiliation:
Philipps-Universität Marburg, Renthof 5, D-3550 Marburg, F.R.G.
W. Fuhs
Affiliation:
Philipps-Universität Marburg, Renthof 5, D-3550 Marburg, F.R.G.
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Abstract

Paramagnetic defects in the mobility gap of doped a-Si:Ge:H alloys with a Ge-content of 20% and 30% are studied by electron spin resonance (ESR and LESR). The singly occupied states of Si- and Ge-dangling bonds are found to be centered around midgap with no detectable difference in energy position. The ESR-spectra exhibit at least two paramagnetic resonances in both n- and p-type samples which are attributable to singly occupied tail states. At a given distance of the Fermi level from the mobility edge of the conduction band the density of states is much higher in the alloys than in a-Si:H. In phosphorus doped material hyperfine structure is observed which arises from two different phosphorus states: fourfold coordinated phosphorus (P°4).and twofold coordinated phosphorus (P°2).

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 118: Symposium E – Amorphous Silicon Technology , 1988 , 635
Copyright
Copyright © Materials Research Society 1988

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