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Defect States Due to Silicon Dangling Bonds at the Si(100)/SiO2 Interface and the Passivation by Hydrogen Atoms

Published online by Cambridge University Press:  10 February 2011

C. Kaneta ,
T. Yamasaki ,
T. Uchiyama ,
T. Uda  and
K. Terakura
C. Kaneta
Affiliation:
Fujitsu Laboratories Limited, 10-1 Morinosato-Wakamiya, Atsugi, 243-0197, Japan, kaneta@flab.fijitsu.co.jp
T. Yamasaki
Affiliation:
Fujitsu Laboratories Limited, 10-1 Morinosato-Wakamiya, Atsugi, 243-0197, Japan, kaneta@flab.fijitsu.co.jp
T. Uchiyama
Affiliation:
JRCAT-ATP, 1-1-4 Higashi, Tsukuba, 305-8562, Japan
T. Uda
Affiliation:
JRCAT-ATP, 1-1-4 Higashi, Tsukuba, 305-8562, Japan
K. Terakura
Affiliation:
JRCAT- NAIR, 1-1-4 Higashi, Tsukuba, 305-8562, Japan
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Abstract

The defect states due to the Si dangling-bonds at the Si(100)/SiO2 interface is investigated by employing the first-principles method based on the density functional theory. Two prototypes of the defects at the interface are considered. One exists on one end of a Si-Si dimer. On the other hand, the other exists on an edge of a Si-O-Si bridge. The electronic structures for these systems were calculated to investigate the interface states. For the former, two defect states strongly localizing on the silicon dangling bond at the interface appear in the band gap. The latter defect also generates two defect states. But the upper level is in the conduction band, while the lower level is in the band gap. It is also shown that the interface states completely disappear by introducing a H atom into the interface and terminating the dangling bonds. Our results suggest the silicon dangling-bond on a Si-Si dimer with no adjacent O atoms as a candidate for the Pb1 center.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 592 , 1999 , 39
Copyright
Copyright © Materials Research Society 2000

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References

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