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Defect Scattering of Phonons in Phoiopcited GaAs

Published online by Cambridge University Press:  28 February 2011

J.C. Culbertson ,
P.B. Klein ,
S.A. Wolf  and
U. Strom
J.C. Culbertson
Affiliation:
Naval Research Laboratory, Washington, D.C. 20375
P.B. Klein
Affiliation:
Naval Research Laboratory, Washington, D.C. 20375
S.A. Wolf
Affiliation:
Naval Research Laboratory, Washington, D.C. 20375
U. Strom
Affiliation:
Naval Research Laboratory, Washington, D.C. 20375
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Abstract

The time resolved heat pulse generated by above band gap light is studied at 2 K in undoped, semi—insulating GaAs. The phonon lineshape changes with irradiation by 1.1 micron below gap light. The changes in phonon lineshape are reversed by raising the sanple teaperature to 130 K and recooling to 2M. The results provide strong evidence for the change in acoustic phonon scattering when the defect EL2 is transferred to its metastable state. The phonon scattering anisotropies observed for the [100] and [111] directions is indicative of an anisotropic phonon—defect interaction.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 46: Symposium B – Microscopic Identification of Electronic Defects in Semiconductors , 1985 , 447
Copyright
Copyright © Materials Research Society 1985

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