Hostname: page-component-76fb5796d-qxdb6 Total loading time: 0 Render date: 2024-04-27T03:59:30.681Z Has data issue: false hasContentIssue false
  • English
  • Français

Defect Reduction in Si-based Metal-Semiconductor-Metal Photodetectors with Cryogenic Processed Schottky Contacts

Published online by Cambridge University Press:  01 February 2011

M. Li  and
W. A. Anderson
M. Li
Affiliation:
Department of Electrical Engineering, University at Buffalo, The State University of New York, Buffalo, NY 14260
W. A. Anderson
Affiliation:
Department of Electrical Engineering, University at Buffalo, The State University of New York, Buffalo, NY 14260
Get access

Abstract

Metal-Semiconductor-Metal photodetectors (MSM-PD's) and simple Schottky diodes were fabricated using a low temperature (LT) technique to greatly reduce the device dark current. LT processing for metal deposition increased Schottky barrier height by improving the interface between metal and semiconductor to reduce the leakage current of the device. The structure consists of a 20 Å oxide over the active area to passivate surface states, a thicker oxide under contact pads to reduce dark current and the interdigitated Schottky contacts. A comparison was made for Schottky metal deposited with the substrate at 25 °C or -50 °C (LT). The devices fabricated using the LT process had better I-V characteristics compared to detectors fabricated using the standard room temperature (RT) metal deposition technique. The dark current for the LT film was found to be one to three orders lower in magnitude compared to the film deposited at RT. In one case, for example, the dark current was significantly reduced from 1.69 nA to 4.58 pA at 1.0 V. The active area for the device was determined to be 36 × 50 μm2 with 4 μm electrode width and 4 μm electrode spacing. Additionally, LT-MSM-PD's exhibited an excellent linear relationship between the photo-current and the incident light power. The Schottky barrier height for LT processing was found to be 0.79 eV; however, this value was 0.1 eV more than that of the same contact obtained by RT processing.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 864: Symposium E – Semiconductor Defect Engineering-Materials, Synthesis Structures and Devices , 2005 , E9.39
Copyright
Copyright © Materials Research Society 2005

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

[1] Hong, W. P., Chang, G. K., and Bhat, R. H., “High-performance A10.15Ga0.85As/In0.53Ga0.47As MSM photodetectors grown by OMCVD,” IEEE Trans. Electron Dev., 36, 659 (1989).Google Scholar
[2] Moons, J. H., Li, S. S., and Lee, J. H., “High performance superlattice coupled quantum well infrared photodetector for long wavelength infrared detection,” Electron. Lett., 37, 1249 (2001).Google Scholar
[3] Herrscher, M., Grundmann, M., Droge, E., Kollakowski, S., Bottcher, E. H., and Bimberg, D., “Epitaxial liftoff InGaAs/InP MSM photodetectors on Si,” Electron. Lett., 31, 1383 (1995).Google Scholar
[4] Stiff, A. D., Krishna, S., Bhattacharya, P., and Kennerly, S. W., “A PMOS tunneling photodetector,” IEEE Trans. Electron Dev., 48, 1747 (2001).Google Scholar
[5] Lee, H. J. and Anderson, W. A., “Barrier height enhancement of Schottky diodes on n-In0.53Ga0.47As by cryogenic processing,” Appl. Phys. Lett., 63, 1939 (1993).Google Scholar
[6] Palmer, J. W. and Anderson, W. A., “Novel metal-semiconductor-metal photodetectors on bulk semi-insulating indium phosphide,” IEEE Photon. Technol. Lett., 9, 1385 (1997).Google Scholar
[7] Hong, H. and Anderson, W. A., “Cryogenic processed metal-semiconductor-metal (MSM) photodetectors on MBE grown ZnSe,” IEEE Trans. Electron Lett., 46, 1127 (1999).Google Scholar
[8] Wohlmuth, W. A., Arafa, M., Mahajan, A., Fay, P., and Adesida, I., “InGaAs metalsemiconductor-metal photodetectors with engineered Schottky barrier heights,” Appl. Phys. Lett., 69, 3578 (1996).Google Scholar
[9] Tyagi, M. S., Metal-Semiconductor Schottky Barrier Junctions and Their Applications (ed. Sharma, B. L.), pp. 20–21, Plenum Press, New York (1984).Google Scholar
[10] Hirata, D., Sugino, T., and Shirafuji, J., “Improvement of dark current density of AlInAs/InGaAs metal-semiconductor-metal photodetector using phosphine-plasmatreated schottky barrier,” Jpn. J. Appl. Phys., 35, 1779 (1996).Google Scholar
[11] Chan, P. T., Choy, H. S., Shu, C., and Hsu, C. C., “High-performance InP/Ga0.47In0.53As/InP metal-semiconductor-metal photodetectors with a strained A10.1In0.9P barrier enhancement layer,” Appl. Phys. Lett., 67, 1715 (1995).Google Scholar
[12] Soole, J. B. D. and Schumacher, H., “InGaAs metal-semiconductor-metal photodtectors for long wavelength optical communications,” IEEE J. Quantum Electron., 27, 737 (1991).Google Scholar