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Defect Reduction in Remote Plasma Deposited Silicon Nitride by Post-Deposition Rapid Thermal Annealing

Published online by Cambridge University Press:  10 February 2011

G. Lucovsky ,
C. R. Parker ,
Y. Wu  and
J. R. HAUSER
G. Lucovsky
Affiliation:
Departments of Physics, Electrical and Computer Engineering, Materials Science and Engineering, North Carolina State University, Raleigh, NC 27695
C. R. Parker
Affiliation:
Departments of Physics, Electrical and Computer Engineering, Materials Science and Engineering, North Carolina State University, Raleigh, NC 27695
Y. Wu
Affiliation:
Departments of Physics, Electrical and Computer Engineering, Materials Science and Engineering, North Carolina State University, Raleigh, NC 27695
J. R. HAUSER
Affiliation:
Departments of Physics, Electrical and Computer Engineering, Materials Science and Engineering, North Carolina State University, Raleigh, NC 27695
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Abstract

This paper describes a novel synthesis route for producing defect-free siliclon nitride films that are demonstrated to provide state of the art electrical performance in MOS devices with stacked oxidenitride gate dielectrics in both nmos and pmos devices. High concentrations of bonded hydrogen are introduced into the as-deposited nitride films during a 300°C remote plasma-enhanced deposition, and then the majority of this hydrogen is evolved during a 30 second rapid thermal anneal (RTA) at 900°C. The nitride formed in this way is effectively “defect-free” and qualitatively different from nitride films formed by conventional chemical vapor deposition processes.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 525: Symposium W – Rapid Thermal & Integrated Processing VII , 1998 , 187
Copyright
Copyright © Materials Research Society 1998

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References

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