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Defect Reduction and Improved Device Performance using Rapid Isothermal Diffusion in Silicon

Published online by Cambridge University Press:  15 February 2011

L. Vedula ,
R. Singh ,
D. Ratakonda ,
A. Rohatgi  and
S. Narayanan
L. Vedula
Affiliation:
Clemson University, Department of Electrical and Computer Engineering, Clemson, SC 29634
R. Singh
Affiliation:
Clemson University, Department of Electrical Computer Engineering and Director, Materials Science and Engineering, Clemson, SC 29634, raj.singh@ces.clemson.edu
D. Ratakonda
Affiliation:
Clemson University, Department of Electrical and Computer Engineering, Clemson, SC 29634
A. Rohatgi
Affiliation:
Georgia Institute of Technology, School of Electrical Engineering, Atlanta, GA 30332
S. Narayanan
Affiliation:
Solarex, Frederick, MD 21701.
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Abstract

Quantum photoeffects associated with photons of wavelength less than 0.8 micron lead to higher bulk and surface diffusion coefficients. We have exploited this fundamental property in designing rapid isothermal processing (RIP) systems for shallow junction formation in silicon. A detailed comparative study of diffusion, metallization and CVD with and without high energy photons has been carried out. The results show that microscopic defects, cycle time and processing temperature is lower than what can be achieved byconventional methods is realized by using photons in the ultra violet (UV) and vacuum ultra violet (VUV) spectrum.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 469: Symposium E – Defects and Diffusion in Silicon Processing , 1997 , 437
Copyright
Copyright © Materials Research Society 1997

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References

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