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Defect Generation by Proton Irradiation of Semi-Insulating Lec GaAs

Published online by Cambridge University Press:  15 February 2011

A. Castaldin ,
A. Cavallini ,
L. Polenta ,
C. Canali ,
F. Nava ,
E. De La Puentee ,
A. Alvarez  and
J. Jimenez
A. Castaldin
Affiliation:
INFM ETSII, 47011 Valladolid, Spain Dip. Fisica, Universita di Bologna, 40126 Bologna, Italy
A. Cavallini
Affiliation:
INFM ETSII, 47011 Valladolid, Spain Dip. Fisica, Universita di Bologna, 40126 Bologna, Italy
L. Polenta
Affiliation:
INFM ETSII, 47011 Valladolid, Spain Dip. Fisica, Universita di Bologna, 40126 Bologna, Italy
C. Canali
Affiliation:
INFM ETSII, 47011 Valladolid, Spain Dip. Elettronica, University of Modena, Modena, Italy
F. Nava
Affiliation:
Dip. Fisica, University of Modena, Modena, Italy
E. De La Puentee
Affiliation:
Fisica de la Materia Condensada, ETSII, 47011 Valladolid, Spain, jimenez@fmc.uva.es
A. Alvarez
Affiliation:
Fisica de la Materia Condensada, ETSII, 47011 Valladolid, Spain, jimenez@fmc.uva.es
J. Jimenez
Affiliation:
Fisica de la Materia Condensada, ETSII, 47011 Valladolid, Spain, jimenez@fmc.uva.es
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Abstract

High energy and high fluence proton irradiated semi-insulating GaAs has been studied by EBIC, PL mapping, C-V, NTSC, PICTS and p-DLTS. The main defects generated by the irradiation were analyzed. An EL2-like defect was found to be dominant. The generation of this defect annihilates the typical cellular distribution of EL2 in as-grown material. The generated EL2 defects present a different photoquenching behavior than the as-grown EL2 defects.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 540: Symposium N / Microstructural Processes in Irradiated Materials , 1998 , 73
Copyright
Copyright © Materials Research Society 1999

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