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Defect Characterization of High-Rate Deposited Hydrogenated Amorphous Silicon Films

Published online by Cambridge University Press:  10 February 2011

Florence Y. M. Chan ,
Y. W. Lam ,
Y. C. Chan ,
S. H. Lin ,
X. Y. Lin ,
W. S. Lau  and
S. J. Chua
Florence Y. M. Chan
Affiliation:
Department of Electronic Engineering, City University of Hong Kong, Hong Kong
Y. W. Lam
Affiliation:
Department of Electronic Engineering, City University of Hong Kong, Hong Kong
Y. C. Chan
Affiliation:
Department of Electronic Engineering, City University of Hong Kong, Hong Kong
S. H. Lin
Affiliation:
Department of Electronic Engineering, City University of Hong Kong, Hong Kong
X. Y. Lin
Affiliation:
Department of Physics, Shantou University, Guangdong, P. R. China (515063)
W. S. Lau
Affiliation:
Department of Electrical Engineering, National University of Singapore, Republic of Singapore
S. J. Chua
Affiliation:
Department of Electrical Engineering, National University of Singapore, Republic of Singapore
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Abstract

High rate deposition of a-Si:H films has become one of the key techniques for low-cost, large-scale production of thin film devices. Hydrogenated amorphous silicon films were fabricated with a thermocatalytic PCVD method of which the deposition rate was up to 1.5 nm/sec. The Heterojunction Monitored Capacitance method was employed to determine the midgap-state densities in the undoped semiconductor film from high frequency C-V characteristics. Experimental results showed that the thermocatalytic PCVD method is an effective way to produce high-rate deposited a-Si:H films.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 420: Symposium A – Amorphous Silicon Technology-1996 , 1996 , 599
Copyright
Copyright © Materials Research Society 1996

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