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Deep Levels in n-Type Schottky and p+-n Homojunction GaN Diodes

Published online by Cambridge University Press:  03 September 2012

A. Hierro ,
D. Kwon ,
S. A. Ringel ,
M. Hansen ,
U. K. Mishra ,
S. P. Denbaars  and
J. S. Speck
A. Hierro
Affiliation:
Deptartment of Electrical Engineering, The Ohio State University, Columbus, OH 43210-1272
D. Kwon
Affiliation:
Deptartment of Electrical Engineering, The Ohio State University, Columbus, OH 43210-1272
S. A. Ringel
Affiliation:
Deptartment of Electrical Engineering, The Ohio State University, Columbus, OH 43210-1272
M. Hansen
Affiliation:
Materials and Electrical and Computer Engineering Departments, University of California, Santa Barbara, CA 93016
U. K. Mishra
Affiliation:
Materials and Electrical and Computer Engineering Departments, University of California, Santa Barbara, CA 93016
S. P. Denbaars
Affiliation:
Materials and Electrical and Computer Engineering Departments, University of California, Santa Barbara, CA 93016
J. S. Speck
Affiliation:
Materials and Electrical and Computer Engineering Departments, University of California, Santa Barbara, CA 93016
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Abstract

The deep level spectra in both p+-n homojunction and n-type Schottky GaN diodes are studied by deep level transient spectroscopy (DLTS) in order to compare the role of the junction configuration on the defects found within the n-GaN layer. Both majority and minority carrier DLTS measurements are performed on the diodes allowing the observation of both electron and hole traps in n-GaN. An electron level at Ec-Et=0.58 and 0.62 V is observed in the p+-n and Schottky diodes, respectively, with a concentration of ∼3-4×1014cm−3 and a capture cross section of ∼1-5×10−15cm2. The similar Arrhenius behavior indicates that both emissions are related to the same defect. The shift in activation energy is correlated to the electric field enhanced-emission in the p+-n diode, where the junction barrier is much larger. The p+-n diode configuration allows the observation of a hole trap at Et-Ev=0.87 eV in the n-GaN which is very likely related to the yellow luminescence band.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 595: Symposium W – GaN and Related Alloys - 1999 , 1999 , F99W11.80
Copyright
Copyright © Materials Research Society 1999

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