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Deep Levels in 4H Silicon Carbide Epilayers Induced by Neutron-Irradiation up to 1016 n/cm2

Published online by Cambridge University Press:  01 February 2011

Anna Cavallini ,
Antonio Castaldini ,
Filippo Nava ,
Paolo Errani  and
Vladimir Cindro
Anna Cavallini
Affiliation:
cavallini@bo.infn.it, University of Bologna, Physics, Viale Berti Pichat 6/2, Bologna, N/A, 40127, Italy, +390512095108, +390512095153
Antonio Castaldini
Affiliation:
castaldini@bo.infn.it, University of Bologna, Physics, Viale Berti Pichat 6/2, Bologna, N/A, 40127, Italy
Filippo Nava
Affiliation:
nava.filippo@unimo.it, University of Modena, Physics, Via Campi 183, Modena, N/A, 41100, Italy
Paolo Errani
Affiliation:
paoloerrani1977@libero.it, University of Modena, Physics, Via Campi 183, Modena, N/A, 41100, Italy
Vladimir Cindro
Affiliation:
vladimir.cindro@ijs.si, Josef Stefan Institute, Neutron Irradiation Facility, Josef Stefan Institute Yadranska 39, Ljublljana, N/A, 1000, Slovenia
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Abstract

We investigated the electronic levels of defects introduced in 4H-SiC α-particle detectors by irradiation with 1 MeV neutrons up to a fluence equal to 8x1015 n/cm2. As well, we investigated their effect on the detector radiation hardness. This study was carried out by deep level transient spectroscopy (DLTS) and photo-induced current transient spectroscopy (PICTS). As the irradiation level approaches fluences in the order of 1015 n/cm2, the material behaves as highly resistive due to a very great compensation effect but the diodes are still able to detect with a acceptably good charge collection efficiency (CCE) equal to 80%. By further increasing fluence, CCE decreases reaching the value of ≈ 20% at fluence of 8x1015 n/cm2.

The dominant peaks in the PICTS spectra occur in the temperature range [400, 700] K. Enthalpy, capture cross-section and order of magnitude of the density of such deep levels were calculated. In the above said temperature range the deep levels associated to the radiation induced defects play the key role in the degradation of the CCE. Two deep levels at Et = 1.18 eV and Et = 1.50 eV are likely to be responsible of such dramatic decrease of the charge collection efficiency. These levels were reasonably associated to an elementary defect involving a carbon vacancy and to a defect complex involving a carbon and a silicon vacancy, respectively.

Keywords

defectsdeep level transient spectroscopy (DLTS)radiation effects
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 911: Symposium B – Silicon Carbide 2006 – Materials, Processing and Devices , 2006 , 0911-B06-01
Copyright
Copyright © Materials Research Society 2006

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