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Deep Level Luminescence Measurements of MBE CdTe Growth Quality and Processing

Published online by Cambridge University Press:  21 February 2011

J. L. Shaw ,
L. J. Brillson ,
S. Sivananthan  and
J. P. Faurie
J. L. Shaw
Affiliation:
Naval Research Laboratory, Washington D. C. 20375
L. J. Brillson
Affiliation:
Xerox Webster Research Laboratory, Webster, NY 14580
S. Sivananthan
Affiliation:
Microphysics Laboratory, Physics dept., University of Illinois at Chicago, Chicago, IL 60680
J. P. Faurie
Affiliation:
Microphysics Laboratory, Physics dept., University of Illinois at Chicago, Chicago, IL 60680
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Abstract

We used photoluminescence spectroscopy to monitor CdTe in-situ during surface processing in order to optimize the surface electronic quality. Spectra of optimally-prepared (100) films grown by molecular beam epitaxy reveal low intensity emission from deep states relative to typical bulk-grown material.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 161: Symposium E – Properties of II-VI Semiconductors: Bulk Crystals, Epitaxial Films, Quantum Well Structures, and Dilute Magnetic Systems , 1989 , 59
Copyright
Copyright © Materials Research Society 1990

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References

REFERENCES

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