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Deep Defect Relaxation in Hydrogenated Amorphous Silicon: New Experimental Evidence and Implications

Published online by Cambridge University Press:  10 February 2011

J. David Cohen ,
Fan Zhong ,
Daewon Kwon  and
C.-C. Chen
J. David Cohen
Affiliation:
Department of Physics, University of Oregon, Eugene, OR 97403, U.S.A.
Fan Zhong
Affiliation:
Department of Physics, University of Oregon, Eugene, OR 97403, U.S.A.
Daewon Kwon
Affiliation:
Department of Physics, University of Oregon, Eugene, OR 97403, U.S.A.
C.-C. Chen
Affiliation:
Department of Physics, University of Oregon, Eugene, OR 97403, U.S.A.
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Abstract

We review modulated photocurrent experiments which indicate that thermal emission rate for Do defects in intrinsic samples varies in response to changes in the Fermi-level or quasi-Fermi position. This apparent shift in energy threshold is confirmed using time resolved sub-band-gap spectroscopy. We also demonstrate that such a variation of emission rate with changes in the Fermi-level position, if present within the depletion region near a barrier junction, is consistent with the details of the temperature dependence of the junction capacitance in intrinsic samples.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 507: Symposium A – Amorphous & Microcrystalline Silicon Technology 1998 , 1998 , 781
Copyright
Copyright © Materials Research Society 1998

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References

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