Hostname: page-component-7479d7b7d-q6k6v Total loading time: 0 Render date: 2024-07-12T16:19:05.250Z Has data issue: false hasContentIssue false
  • English
  • Français

D.C Current-Voltage Characteristics and Admittance Spectroscopy of an Al-Porous Si Barrier

Published online by Cambridge University Press:  15 February 2011

K. Khirouni ,
J. C. Bourgoin ,
K. Borgi ,
H. Maaref ,
D. Deresmes  and
D. Stiévenard
K. Khirouni
Affiliation:
Laboratoire des Semiconducteurs, Faculté des Sciences de Monastir, Route de Kairouan, 5000 Monastir, Tunisia.
J. C. Bourgoin
Affiliation:
Groupe de Physique des Solides, Universités Paris 6 et Paris 7, Tour 23, 2 place Jussieu, 75251 Paris Cedex 05, France
K. Borgi
Affiliation:
Laboratoire des Semiconducteurs, Faculté des Sciences de Monastir, Route de Kairouan, 5000 Monastir, Tunisia.
H. Maaref
Affiliation:
Laboratoire des Semiconducteurs, Faculté des Sciences de Monastir, Route de Kairouan, 5000 Monastir, Tunisia.
D. Deresmes
Affiliation:
I.E.M.N., Département I.S.E.N., C.N.R.S. (UMR 9929), Avenue Poincaré, Cité Scientifique, BP 69, 59652 Villeneuve d'Ascq Cedex, France.
D. Stiévenard
Affiliation:
I.E.M.N., Département I.S.E.N., C.N.R.S. (UMR 9929), Avenue Poincaré, Cité Scientifique, BP 69, 59652 Villeneuve d'Ascq Cedex, France.
Get access

Abstract

We present the temperature and frequency dependence of the current-voltage (I-V) characteristics of Al barriers deposited on porous Si grown on p-type Si substrates. These barriers exhibit a rectifying behaviour when the temperature is higher than 250 K. The I-V characteristics can be understood by a conduction in porous Si taking place via free electrons thermally excited from Pb centers associated with the existence of a SiO2-Si interface and via hopping between these Pb centers.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 452 , 1996 , 619
Copyright
Copyright © Materials Research Society 1997

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1.Ben-Chorin, M., Möller, F. and Koch, F., Phys. Rev. B 49, 2981 (1994).Google Scholar
2.Ben-Chorin, M., Möller, F. and Koch, F., J. Luminescence 57, 159 (1993).Google Scholar
3.Deresmes, D., Marissael, V., Stiévenard, D. and Ortega, C., Thin Sol. Film 255, 258 (1995).Google Scholar
4.Cadet, C., Deresmes, D., Vuillaume, D. and Stiévenard, D., Appl. Phys. Lett. 64, 2827 (1994).Google Scholar
5.Lozarouk, S., Jaquiro, P., Katsouka, S., Masini, G., La Monica, S., Marello, G. and Ferrari, A., Appl. Phys. Lett. 68, 2108 (1996).Google Scholar
6.Simons, A.J., Cox, T.I., Uren, M.J. and Calcott, P.D.J., Thin Sol. Film 255, 12 (1995).Google Scholar
7.Pointdexter, E.N., Semiconcl. Sci. Technol. 4, 961 (1989).Google Scholar
8.Yakimov, A.I., Stepina, N.P., Dvurechenskii, A.V. and Scherbakova, L.A., Physica B 205, 298 (1995).Google Scholar
9.Sze, S.M., Physics of Semiconductor Devices (J. Wiley, New York, 1981), Chap. 7.Google Scholar
10.von Bardeleben, H.J., Stiévenard, D., Grosman, A., Ortega, C. and Siejka, J., Phys. Rev. B 47, 10899 (1993).Google Scholar