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DC and AC Gate-Bias Stability of Nanocrystalline Silicon Thin-Film Transistors Made on Colorless Polyimide Foil Substrates

Published online by Cambridge University Press:  28 June 2011

I-Chung Chiu ,
I-Chun Cheng ,
Jian Z. Chen ,
Jung-Jie Huang  and
Yung-Pei Chen
I-Chung Chiu
Affiliation:
Graduate Institute of Photonics and Optoelectronics, National Taiwan University, Taipei, 10617 Taiwan
I-Chun Cheng*
Affiliation:
Graduate Institute of Photonics and Optoelectronics, National Taiwan University, Taipei, 10617 Taiwan Department of Electrical Engineering, National Taiwan University, Taipei, 10617 Taiwan
Jian Z. Chen
Affiliation:
Institute of Applied Mechanics, National Taiwan University, Taipei, 10617 Taiwan
Jung-Jie Huang
Affiliation:
Department of Materials Science and Engineering, MingDao University, Changhua, 52345 Taiwan
Yung-Pei Chen
Affiliation:
Display Technology Center, Industrial Technology Research Institute, Hsinchu, 31040 Taiwan
*
*Corresponding author: ichuncheng@cc.ee.ntu.edu.tw
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Abstract

Staggered bottom-gate hydrogenated nanocrystalline silicon (nc-Si:H) thin-film transistors (TFTs) were demonstrated on flexible colorless polyimide substrates. The dc and ac bias-stress stability of these TFTs were investigated with and without mechanical tensile stress applied in parallel to the current flow direction. The findings indicate that the threshold voltage shift caused by an ac gate-bias stress was smaller compared to that caused by a dc gate-bias stress. Frequency dependence of threshold voltage shift was pronounced in the negative gate-bias stress experiments. Compared to TFTs under pure electrical gate-bias stressing, the stability of the nc-Si:H TFTs degrades further when the mechanical tensile strain is applied together with an electrical gate-bias stress.

Keywords

plasma-enhanced CVD (PECVD) (deposition)Sithin film
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1321: Symposium A – Amorphous and Polycrystalline Thin-Film Silicon Science and Technology , 2011 , mrss11-1321-a22-03
Copyright
Copyright © Materials Research Society 2011

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References

REFERENCES

1. Gleskova, H. and Wagner, S., IEEE Electron Device Lett., 20, 473–475 (1999).10.1109/55.784456Google Scholar
2. Long, K., Kattamis, A. Z., Cheng, I-C., Gleskova, H., Wagner, S., and Sturm, J. C., IEEE Electron Device Lett., 27, 111–113 (2006).Google Scholar
3. Cheon, J. H., Lee, W. G., Lim, T. H., and Jang, J., Electrochem. and Solid-State Lett., 12, 25–28 (2009).10.1149/1.3054333Google Scholar
4. Cheng, I-C. and Wagner, S., Appl. Phys. Lett., 80, 440–442 (2002).10.1063/1.1435798Google Scholar
5. Lee, C. H., Sazonov, A., and Nathan, A., Appl. Phys. Lett., 86, 222106–1-3 (2005).Google Scholar
6. Kattamis, A.Z., Holmes, R.J., Cheng, I-Chun; Long, K., Sturm, J.C., Forrest, S.R., Wagner, S., IEEE Electron Device Lett., 27, 49-51 (2006).Google Scholar
7. Chen, Y. and Wagner, S., Appl. Phys. Lett., 75, 1125–1127 (1999).10.1063/1.124617Google Scholar
8. Beck, N., Meier, J., Fric, J., Remeš, Z., Poruba, A., Flückiger, R., Pohl, J., Shah, A. and Vaněček, M., J. Non-Cryst. Solids, 198–200, 903–906 (1996).10.1016/0022-3093(96)00080-4Google Scholar
9. Orpella, A., Voz, C., Puigdollers, J., Dosev, D., Fonrodona, M., Soler, D., Bertomeu, J., Asensi, J.M, Andreu, J. and Alcubilla, R., Thin Solid Films, 395, 335–338 (2001).10.1016/S0040-6090(01)01290-1Google Scholar
10. Kanicki, J. and Martin, S., “Thin Film Transistors,” Kagan, C. R. and Andry, P., Eds. (New York: Marccel Dekker, 2003) pp. 71–138.Google Scholar
11. Gleskova, H., Hsu, P. I., Xi, Z., Sturm, J. C., Suo, Z., and Wagner, S., Journal of Non-Crystalline Solids, 338–340, 732–735 (2004).10.1016/j.jnoncrysol.2004.03.079Google Scholar
12. Won, S. H., Chung, J. K., Lee, C. B., Nam, H. C., Hur, J. H., and Jang, J., J. Electrochem. Soc., 151, G167–G170 (2004).Google Scholar
13. Kaneko, Y., Sasano, A., and Tsukada, T., J. Appl. Phys., 69, 7301–7305 (1991).10.1063/1.347577Google Scholar
14. Hekmatshoar, B., Cherenack, K. H., Wagner, S. and, Sturm, J. C., Digest of 2008 International Electron Devices Meeting, 89–91 (2008).Google Scholar
15. Chen, J. Z., Cheng, I-C., Wagner, S, Jackson, W., Perlov, C., and Taussig, C., Proc. Mater. Res. Soc., 989, 0989-A09-04 (2007).10.1557/PROC-0989-A09-04Google Scholar
16. Chiang, C. S., Kanicki, J. and Takechi, K., Japanese Journal of Applied Physics, 37, 4704–4710 (1998).Google Scholar
17. Huang, C. Y., Teng, T. H., Tsai, J. W. and Cheng, H. C., Japanese Journal of Applied Physics, 39, 3867–3871 (2000).Google Scholar
18. Oritsuki, R., Horii, T., Sasano, A., Tsutsui, K., Koizumi, T., Kaneko, Y. and Tsukada, T., Japanese Journal of Applied Physics, 30, 3719–3723 (1991).10.1143/JJAP.30.3719Google Scholar